Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71482
標題: Hot-wire chemical vapor deposition and characterization of p-type nanocrystalline SiC films and their use in Si heterojunction solar cells
作者: Mao, H.Y.
Wuu, D.S.
Wu, B.R.
Lo, S.Y.
Hsieh, H.Y.
Horng, R.H.
關鍵字: Nanocrystalline
Silicon carbide
Hydrogenation
Heterojunction
Solar
cell
amorphous-silicon
atomic-hydrogen
substrate temperatures
structural-properties
filament
hwcvd
期刊/報告no:: Thin Solid Films, Volume 520, Issue 6, Page(s) 2110-2114.
摘要: Wide optical bandgap p-type nanocrystalline silicon carbide (p-nc-SiC) films deposited by hot-wire chemical vapor deposition were used as window layers in n-type crystalline Si heterojunction (HJ) solar cells. The effect of H-2 flow rates on the material properties of p-nc-SiC films was investigated by X-ray diffractometer and Raman spectroscopy. Moreover, the optical and electrical properties, such as optical bandgap (E-g), dark conductivity, and activation energy (E-a), of p-nc-SiC films were also measured. It was found that H-2 flow rates played an important role in forming of p-nc-SiC films and increasing the E-g, and decreasing the E-a of p-nc-SiC films. Moreover, the effect of hydrogenation process of the amorphous Si buffer layer on solar cell characteristics was investigated. After the deposition and hydrogenation parameters were optimized, the Si HJ solar cells with the open-circuit voltage of 0.59 V, short-circuit current density of 38.06 mA/cm(2), fill factor of 62.03%, and the conversion efficiency of 14.09% could be obtained. (C) 2011 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/71482
ISSN: 0040-6090
文章連結: http://dx.doi.org/10.1016/j.tsf.2011.08.087
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