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High reliability and low leakage current of asymmetric amorphous silicon thin film transistor
雖然後通道蝕刻的薄膜電晶體，有製程簡單步驟即可完成的優點，但是因為通道暴露於乾蝕刻的高能電漿(High energy plasma)環境下，會破壞通道內非晶矽的鍵結，造成薄膜電晶體的漏電流偏高、可靠度變差的負面影響，進而造成整個顯示器的光學表現變差，此項嚴重問題急需克服。
This paper discusses primarily from the base of present studies using plasma treatment to recover the dry-etching channel damage caused by high energy plasma and improving the leakage current and reliability of TFT. According to current five masks post-channel etching procedure, we perform the researches of most optimum and most proper process point for plasma treatment, hoping to find out the best process condition and increase the ability of low-cost four masks procedure . Although post-channel etching TFT has the advantage of more easy procedure , but the channel is exposed to the dry-etching high energy plasma , it would destroy the amorphous bounding in the channel causing higher leakage current and worse reliability , and also decreases the optical performance of the display. This serious questions need to overcome. About plasma process, we take TFTs which had completed three masks and exposed the amorphous layer never plasma treatment. Then , we process them with different gas like NH3,N2O, H2 and N2 , respectively .Then comparing the electric characteristics between before-process and after- process and compare the process time and power under different gas in order to find out best process condition.
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