Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/72251
標題: 450℃退火對Cz矽晶內氧凝聚遲滯現象所造成的影響
An Observation of Oxygen Precipitation Retardation Phenomenon Induced by 450℃Anneal in Czochralski Silicon
作者: 貢中元
徐瑋
劉進明
關鍵字: 氧凝聚遲滯
氧凝聚物
二溫階退火
三溫階退火
微觀結構
出版社: 國立中興大學工學院;Airiti Press Inc.
摘要: 本文以二溫階(450℃-1000℃)和三溫階(1150℃-450℃-1000℃)退火實驗來研 究 Cz 矽晶內的氧凝聚行為。在二溫階的實驗中觀察到很明顯的氧凝聚遲滯現象,然而在三 溫階實驗中氧凝聚遲滯現象則不明顯。在三溫階實驗第一步驟 1150 ℃的高溫退火,會使氧 凝聚遲滯現象在較短的孕核時間內發生。 我們發現矽晶內的微觀缺陷隨著 450 ℃的孕核時 間而改變。二溫階與三溫階退火所產生的微觀缺陷隨 450 ℃退火時間的變化是十分類似的 。
Two-step(450℃-1000℃)and three-step (1150℃-450℃-1000℃)annealing experiments were carried out to study oxygen percipitation behavior in Czochralski silicon. A distinct retardation of precipitation was observed during the two-step anneal,while the retardation during the three-step anneal was less pronounced. With the three-step anneal, the first hight temperature 1150 ℃ anneal in N ?? ambient caused the retardation to occur at shorter nucleation times. The microstructure characteristics as function of uncleation ( 450 ℃) anneal time were similar in the two-step and three-step annealed samples.
URI: http://hdl.handle.net/11455/72251
ISSN: 1017-4397
Appears in Collections:第08卷 第2期
工學院

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.