Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/74635
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dc.contributor.author洪瑞華zh_TW
dc.contributor.author彭韋智zh_TW
dc.contributor.author武東星zh_TW
dc.contributor.other工學院zh_TW
dc.date2002-07zh_TW
dc.date.accessioned2014-06-13T05:38:40Z-
dc.date.available2014-06-13T05:38:40Z-
dc.identifier.issn1017-4397zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/74635-
dc.description.abstract具Au/AuBe/Ta/Si鏡面基板之850nm垂直共振腔栽射型雷射(VCSEL)已被用溫之晶片接合技術製作成功。由研究發現鏡面基板能用來當作下反射鏡,加強下分佈式布拉格反射鏡之反射率,此一金屬反射鏡面亦當作黏貼層與歐姆幹觸層之作用,用以接合矽基板與VCSEL之磊晶膜。當鏡面基板接合之VCSEL於室溫被連續波之電流注入時,此類VCSEL之臨界電流密度與差動電阻(22A/cm2, 35Ω)較黏貼前長晶於砷化鎵基板之VCSEL(77 A/cm2, 60Ω)低。zh_TW
dc.description.abstractAn 850-mm vertical-cavity surface-emitting laser (VCSEL) with a Au/AuBe/Ta/Si sirror substrate has been demonstrated y low-temperature wafer bonding. It is found that the mirror substrate can be used as the bottom reflector to enhance the reflectivity of bottom distributed Bragg reflector. The metal mirror also served as the adhesive layer and ohmic contact layers to bond the is substrate and the VCSEL epilayers. As the mirror-substrate bonded VCSELs excited by continuous-wave current at room temperature, they present lower threshold current density and differential resistance (22A/cm2, 35Ω) as compared with those of the original VCSELs on GaAs substrates (77 A/cm2, 60Ω). This feature is attributed to the is substrate provides a good heat sink.en_US
dc.language.isoen_USzh_TW
dc.publisher國立中興大學工學院;Airiti Press Inc.zh_TW
dc.relation興大工程學刊, Volume 13, Issue 2, Page(s) 91-96.zh_TW
dc.subject垂直共振腔面射型雷射zh_TW
dc.subject鏡面基板zh_TW
dc.subject晶片接合技術zh_TW
dc.subject分佈式布拉格反射鏡zh_TW
dc.title具晶片接合金屬鏡面矽基板之850-nm垂直共振腔面射型雷射zh_TW
dc.title850-nm+Vertical-Cavity+Surface-Emitting+Lasers+with+a+Wafer-Bonded+Metal-Mirror+SI+Substrateen_US
dc.typeJournal Articlezh_TW
Appears in Collections:第13卷 第2期
工學院
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