Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/7687
標題: 以氫電漿處理改善非晶矽薄膜太陽能電池特性之研究
Study on the performance of a-Si:H pin thin film solar cell by hydrogen plasma passivation
作者: 林明毅
Lin, Ming-Yi
關鍵字: hydrogen plasma
氫電漿
amorphous silicon
solar cell
非晶矽
太陽能電池
出版社: 電機工程學系所
引用: 參考文獻 [1] U.K. Das , E. Centurioni , S.Morrison , D.L. Williamson, A. Madan, Modified pulsed PECVD technique for nano-crystalline silicon solar cells: an effect of i-layer growth temperature. Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on Volume 2, Issue , 12-16 May 2003 Page(s): 1780 - 1783 Vol.2 (2003) [2] U.K. Das , E.Centurioni , S.Morrison , A.Madan , A critical role of p/i interface in nanocrystalline single junction p-i-n solar cells. Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on Volume 2, Issue , 12-16 May 2003 Page(s): 1776 - 1779 Vol.2 (2003) [3] Guozhen Yue , Baojie Yan , J.Yang , S.Guha , United Solar Ovonic Corp., Troy, MI, USA , Study of metastability in hydrogenated nanocrystalline silicon solar cells. Photovoltaic Specialists Conference , 2005.Conference Record of the Thirty-first IEEE, 3-7 Jan. 2005 page(s): 1416- 1419 (2005) [4] M.Fonrodona , D.Soler , J.M.Asensi , J.Bertomeu , J.Andreu, Influence of the crystalline fraction on the stability of nanocrystalline silicon solar cells .Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on Volume 2, Issue , 12-16 May 2003 Page(s): 1768 - 1771 Vol.2 (2003) [5] jae-Hoon jang and Koeng-Su Lim, Enhancement of a-Si:H solar cell characteristics by hydrogen treatment at p/i interface using photo-cvd method. Department of Electrical Engineering, Korea Advanced institute of Science and Technology 25th PVSC, 13-17 May 1996 (1996) [6] Y.S.Tsuo , Y. Xu , R.S.Crandall , D.Han , C.Qiu , J.I.Pankove , Hydrogen-plasma reactive flush for a-Si:H and a-SiGe:H solar cell fabrication. Solar Energy Res. Inst., Golden, CO Photovoltaic Specialists Conference,1990. Conference Record of the Twenty First IEEE, 21-25 May 1990 page(s): 1416-1419 vol.2 (1990) [7] Y.Ashida , N.Ishiguro , K.Saitoh , T.Miyashita , N.Yanagawa , H.Tanaka , M.Sadamoto , N.Fukuda , Preparation of high quality widegap a-Si:H films and its application to a-Si solar cells . Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth ; IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on Volume 1, Issue , 5-9 Dec 1994 Page(s):453 - 456 vol.1 (1994) [8] H.Tanaka , N.Ishiguro , T.Miyashita , N.Yanagawa , M.Sadamoto , M.Koyama , K.Miyachi , Y.Ashida , N.Fukuda , Improvement of p-i buffer layer properties by hydrogen plasmatreatment and its applications to pin a-Si:H solar cells. Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE Volume , Issue , 10-14 May 1993 Page(s):811 – 815 (1993) [9] Y. Simon Tsuo and Joseph B. Milstein , Hydrogen passivation of silicon sheet solar cells. Solar Energy Research Institute, Golden, Colorado 80401 Applied Physics Letters -- November 1, 1984 -- Volume 45, Issue 9, pp. 971-973 (1984) [10] F.Meillaud , E.Vallat-Sauvain , X.Niquille , M.Dubey , J.Bailet , A.Shah , C.Ballif , Light-induced degradation of thin film amorphous and microcrystalline silicon solar cells. IEEE(2005) [11] Pere Roca I Cabarrocas , Anna Fontcuberta I Morral , Sarra Lebib , and Yves Poissant , plasma production of nanocrystalline silicon particles and polymorphous silicon thin films for large-area electronic devices. Pure Appl. Chem., vol. 74, No.3,pp.359-367 (2002) [12] shigeharu Taira , Masaki Shima , Kenji Mirata and Makoto Tanaka , A role of a-Si:H buffer layer for controlling the impurity profiles near p/i interface of microcrystalline silicon solar cell. 3nd World Conference on Photovoltaic Energy Conversion , 11-18 May 2003 Osaka , Japan (2003) [13] Wenhui Du , Xianbo Liao , Xiesen Yang , Henry Povolny , Xianbi Xiang , Xuunming Deng , Kai Sun , hydrogenated nanocrystalline silicon p-layer in amorphous silicon n-i-p solar cells. Solar Energy Materials & Solar Cells 90 (2006) 1098-1104 (2006) [14] S.C. Saha , Sukriti Ghosh , Swati Ray , Widegap a-Si:H film prepared at low substrate temperature. Solar Energy Materials & Solar Cells 45 (1997) 115-126 (1997) [15] G.Ambrosone , U.Coscia , R.Murri , N.Pinto , M.Ficcadenti , L.Morresi , Structural, optical and electrical characterizations of μc-Si:H films deposited by PECVD. Solar Energy Materials & Solar Cells 87 (2005) 375-386 (2005) [16] S.Zhang , X.Liao , L.Raniero , E.Fortunato , Y.Xu , G.kong , H.Aguas , H.Aguas , I.Ferreira , R.Martins , Solar Energy Materials & Solar Cells 90 (2006) 3001-3008 (2006) [17] W.Herbst , J.Dudel , A.Scholz , B.Schröder , H.Oechsner , A study on the influence of the spatial distribution of metastable defects on the properties of s-Si:H p-i-n and n-i-p solar cells: Experiment and numerical simulation. Solar Energy Materials & Solar Cells 37 (1995) 55-74 (1995) [18] Dongsheng Xu 1), Lin Sun, Hongliang Li, Lei Zhang, Guolin Guo, Xinsheng Zhao and Linlin Gui , Hydrolysis and Silanization of the Hydrosilicon Surface of Freshly Prepared Porous Silicon by an Amine Catalytic Reaction. Series of selected papers from Chun-Taung Scholars. Peking University (2002) [19] 莊嘉琛,太陽能工程-太陽電池篇.全華科技圖書股份有限公司, 2005. [20] Lin, Quang-xiang (林光祥). Controlling the silicon and hydrogen bonding configurations and its influence of photodegradation in a-Si:H pin solar cell. NCHU Press (2002)
摘要: 本論文研究目的在製作氫化非晶矽(a-Si:H)p-i-n 薄膜太陽電池的過程中,使用H2 plasma處理p/i介面以研究對效率與光照衰退的影響。氫化非晶矽(a-Si:H)p-i-n 薄膜太陽電池是以電漿加強化學氣相沈積(PECVD)系統製作。在實驗中,我們在p/i介面中使用不同條件的氫電漿保護層,並與未處裡之參考陽電池進行光照衰退實驗,以探討在p/i介面氫電漿保護層對光照衰退之影響。 我們製作了氫稀釋比用10與30倍的非晶矽薄膜pin太陽能電池;我們確定了PN的較好的沉積壓力0.75torr與使用的i層較好的厚度4000Å,在氫稀釋比用10倍時的元件效率最好已經可以到達2.08%,而在氫稀釋比用30倍時的元件效率最好已經可以到達2.77%。 而當我們使用電漿功率較大時,處理時間不行太長;如果電漿功率較小則處理時間不行太短。在3W時候最佳的時間是3分鐘,而5W跟7W則是1分鐘較好。稀釋比10倍的元件再使用壓力0.3torr、流量800sccm、溫度200oC與功率3W的氫電漿處理之後2.08%更可以提升到2.47%,而且光照衰退的效果可以由原先的29%下降到約16%。 最後我們經由實驗發現有效的氫電漿處理不但可以使元件的開路電壓(Voc)上升,還可以使非晶元件內部i層的非晶相位訊號變弱。由於光照衰退也與膜內部的非晶相含量強度有關,我們認為這是氫電漿處理可以改善光照衰退的原因之一,另一個原因是i層照光18小時後內部的非晶相位訊號沒有變化,我們由此推判內部的鍵結並沒有受到照光而被破壞;藉此可以降低照光後的缺陷來抵抗光照衰退。
In this work, we will study on the performance of a-Si:H pin thin film solar cell by using hydrogen plasma passivation in the p/i surface. a-Si:H pin thin film solar cell will be fabricated by using a capacitive-type PECVD. In the experiment, we will use different kind of hydrogen plasma passivation. In order to find the influence on the photodegradation effect, the photodegradation of these solar cells with hydrogen plasma passivation will be compared with the reference cell without hydrogen plasma passivation. we fabricate a-Si:H pin thin film solar cell with 10 ratio and 30 ratio of hydrogen dilution. We make sure that depositing PN layer at 0.75torr pressure and i layer with 4000Å thickness have better performance. However, the best efficiency of a-Si:H pin thin film solar cell with 10 ratio of hydrogen dilution is 2.08%. And the best efficiency of a-Si:H pin thin film solar cell with 30 ratio of hydrogen dilution is 2.77%. We should not treat the surface too long when we use high density power. When we use 3W power﹐the best time for hydrogen plasma passivation is 3 minutes . Besides, the best time for 5 and 7W hydrogen plasma passivation is 1 minute. It is found in the experiment that using the hydrogen plasma passivation at 0.3torr pressure 、200OC substrate temperature、800sccm flow rate, and 3 minutes treatment time can increase the efficiency of a-Si:H pin thin film solar cell with 10 ratio of hydrogen dilution from 2.08% to 2.47%. And photodegradation effect of a-Si:H solar cell will improve form 29% to 16%. Finally, It is found in the experiment that a proper hydrogen plasma passivation can increase the open-circuit voltage and decrease the intensity of amorphous phase in the film. However, the photodegradation effect of a-Si:H solar cell is dependent on the intensity of amorphous phase. We think that it is the reason why hydrogen plasma passivation can improve the photodegradation effect of a-Si:H solar cell. It is notice that we can’t find the defect in the film by 3D Nanometer Scale Raman PL Microspectrometer when the film is exposure to the light for 18 hours. That there is no damage in the structure is the reason for the good improvement on photodegradation effect of a-Si:H solar cell.
URI: http://hdl.handle.net/11455/7687
其他識別: U0005-2408200712131300
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2408200712131300
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