Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/7743
標題: 複晶矽薄膜電晶體與矽金氧半發光二極體之電性分析與元件模擬
Electrical Characteristics and Simulations of LTPS TFT and Si MOS LED
作者: 曾志峰
Tseng, Chih-Feng
關鍵字: LTPS TFT
複晶矽薄膜電晶體
Si MOS LED
leakage current
LPD
EL
矽金氧半發光二極體
漏電流
液相沉積法
電致發光
出版社: 電機工程學系所
引用: [1]陳志強編著,LTPS低溫複晶矽顯示器技術,全華科技圖書股份有限公司,pp. 2-1,2-2,2-7 [2]KITTEL 固態物理學導論 VOL.7 高麗圖書有限公司 [3]施敏原著,黃調元譯,半導體元件物理與製作技術,國立交通大學出版社,pp.176~177 [4]安毓英、曾小東編著,光學感測與測量,五南圖書出版股份有限公司,pp.262~63 [5]C. W. Liu,M. H. Lee,Miin-Jang Chen,I. C. Lin,and Ching-Fuh Lin,"Room-Temperature electroluminescence from electron-hole plasmas in the metal oxide silicon tunneling diodes,Appl . Phys . Lett .,76,pp. 1516-1518,2000. [6]Ching-Fuh Lin,Cheewee Liu,Miin-Jang Chen,Ming-Hung Lee,and I-Cheng,Tunneling Induced Electroluminescence from Metal-Oxide-Semiconductor Structure on Silicon”,SPIE,Proceedings,Vo1. 3953, pp. 37-45,2000. [7]M. J. Chen,J. L. Yen,J. Y. Li,J. F. Chang,S. C. Tsai,and C. S. Tsai,“Stimulated emission in a nanostructured silicon pn junction diode using current injection”,APPLIED PHYSICS LETTERS VOLUME 84,NUMBER 12,P.2163-2165(2004) [8]Martin A. Green,Jianhua Zhao,Aihua Wang,Peter J. Reece,and Michael Gal,”Efficient silicon light-emission diodes”,Nature,vol.412,p.805-808(2001) [9]L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici,G.. Franzo,F. Priolo,F. Iacona,”Dynamics of stimulated emission in silicon nanocrystals”,APPLIED PHYSICS LETTERS VOLUME 82,NUMBER 26,pp. 4636-4638(2003). [10]F Icona。G Franzo,EC Moreira,F Priolo J. Appl. Phys. 89(2001) 8354 [11]G. Franzo,V. Vinciguerra,F. Priolo Appl. Phys. A69(1999) ;G. Franzo,et al,Appl. Phys. Lett. 76(2000) 2167. [12]R. A. Soref,“Thin Solid Films” 294 (1997) 325. [13]M. HL,C.-Y. Yu,T.-H. Guo,C,-H. Lin,and C, W. Liu,”Electroluminescence From the Ge Quantum Dot Mos Tunneling Diodes”,IEEE ELECTRON DEVICE LETTERS,VOL 27. NO. 4. APRIL 2006. [14]N. Yamuachi et al, IEEE Trans. Electron Devices, vol. (38), pp. 55-59 (1991). [15]Luigi Colalongo et al, IEEE Trans. Electron Devices, vol. (44), pp. 2106-2112 (1997). [16]O.K.B.Lui et al, IEEE Trans. Electron Devices, vol. (45), pp. 213-217 (1997). [17]G.A. Armstrong et al. IEEE Electron Device Lett., vol. (7), pp. 315-318 (1997). [18]F.V. Farmakis et al., Solid-State Electron., vol. (44),pp. 913-916 (2000). [19]Philip M. Walker et al, IEEE Trans. Electron Devices, vol. (51), pp. 212-218 (2004). [20]Amit. Sehgal et al, IEEE Trans. Micrwave Theory And Techniques, vol. (53), pp. 2682-2687 (2005) [21]DESSIS User’s Manual, ISE TCAD 10 (2005)
摘要: 在本篇論文中我們討論二個主題: 第一部份: 經由實際實驗觀察出低溫複晶矽(LTPS)薄膜電晶體於低電場下在漏電流區域內有異常之行為。我們利用商業用TCAD軟體來研究此一現象之可能的物理機制。我們TCAD模擬的結果能夠與實驗一致。 第二部份: 我們利用液相沉積法在矽晶圓上成長金氧半穿隧二極體所需的超薄氧化層。接下來利用熱蒸鍍機在氧化層上沉積鋁金屬做為閘極電極。我們於元件背面也沉積鋁金屬做為金氧半二極體另一端的電極。我們量測其電致發光以及電流-電壓特性,以及討論其可能的物理起源。
Two topics are studied in this thesis as following: Part 1: The abnormal behavior of low field leakage current in low temperature polycrystalline silicon (LTPS) thin-film transistors is observed experimentally. The commercial TCAD simulator is used to investigate the possible physical mechanisms of this phenomenon. There is a qualitative agreement between experiments and TCAD simulations. Part 2: The ultra thin oxide used in the MOS tunneling diode is grown by liquid phase deposition (LPD) on Si wafer. Next, aluminum was deposited on oxide as gate electrode using evaporator. The aluminum was deposited on the backside as another electrode of MOS diode. We measured the electroluminescence (EL) and I-V characteristics of MOS LEDs and discuss the possible physical origins.
URI: http://hdl.handle.net/11455/7743
其他識別: U0005-2708200709130200
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2708200709130200
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