Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/84718
標題: Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110)P-channel metal oxide semiconductor field effect transistors
關鍵字: Mobility
SiGe
Split capacitance–voltage
Strain
Subband
URI: http://hdl.handle.net/11455/84718
Appears in Collections:電機工程學系所

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