Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/84735
標題: Residual impurities in a process chamber on the characteristics of a-Si:H solar cells
關鍵字: A-Si:H
Contamination impurities
PECVD
Quantum efficiency
Residual impurities
Solar cells
URI: http://hdl.handle.net/11455/84735
Appears in Collections:電機工程學系所

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.