Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/84762
DC FieldValueLanguage
dc.creatorParvaneh Ravadgaren_US
dc.creatorRay-Hua Horngen_US
dc.creatorShu-De Yaoen_US
dc.creatorHsin-Ying Leeen_US
dc.creatorBing-Rui Wuen_US
dc.creatorSin-Liang Ouen_US
dc.creatorLi-Wei Tuen_US
dc.date2013zh_TW
dc.date.accessioned2014-11-21T01:02:07Z-
dc.date.available2014-11-21T01:02:07Z-
dc.identifier.urihttp://hdl.handle.net/11455/84762-
dc.description.abstractThis study evaluates the effect of crystallinity and point defects on time-dependent photoresponsivity and the cathodoluminescence (CL) properties of β-Ga2O3 epilayers. A synchrotron high-resolution X-ray technique was used to understand the crystalline structure of samples. Rutherford backscattering spectroscopy was used to determine the net chemical composition of the samples to examine the type and ratio of their possible point defects. The results show that in functional time-dependent photoresponsivity of photodetectors based on β-Ga2O3 epilayers, point defects contribution overcomes the contribution of crystallinity. However, the crystalline structure affects the intensities and emission regions of CL spectra more than point defects.en_US
dc.format.medium期刊論文zh_TW
dc.language.isoen_USzh_TW
dc.relationOptics Express, Volume 21, Issue 21, Page(s) 24599-24610.en_US
dc.relation.urihttp://dx.doi.org/10.1364/OE.21.024599zh_TW
dc.titleEffects of crystallinity and point defects on optoelectronic applications of β-Ga2O3 epilayersen_US
dc.identifier.doi10.1364/OE.21.024599zh_TW
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