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Design of on-chip Balun with high coupling factor in CMOS Technology
|引用:||David K.Cheng ,Field and Wave Electromagnetics , 2nded. Addison-Wesley R.Mongia,I. Bahl,and P.Bhartia,RF and Microwave Coupled-ine Circuit. Norwood,MA:Artech House,1998,pp. 391-445. David M. Pozar,Microwave Engineering, 3nded. Wiley,2005. http://www.sonnetsoftware.com/ H. Gan, S.S. Wong “Integrated transformer baluns for RF low noise and power amplifiers” IEEE RFIC Symposium 4pp.june 2006. K.W. Hamed, A.P. Freundorfer, Y.M.M. Antar, “A monolithic double-balanced direct conversion mixer with an integrated wideband passive balun,” IEEE Journal of Solid-State Circuits, vol. 40,no.3, pp.622-629, Mar., 2005. S.C. Tseng ,C.C. Meng, C.H. Chang, C.K. Wu, G.W. Huang, “ Monolithic broadband Gilbert micromixer with an integrated Marchand balun using standard silicon IC process,” IEEE Transactions on Microwave Theory and Techniques, vol. 54,no.12, pp.4362-4377, Dec., 2006. Lai, Ivan C. H.,Fujishima, M. “ An integrated 20-26 GHz CMOS up-conversion mixer with low power consumption,” Proceedings of 32nd European Solid-State Circuits Conference, pp.400-403, 2006. P.S.Wu, C.H.Wang, T.W.Huang, H.Wang, “Compact and broad-band millimeter-wave monolithic transformer balanced mixers”IEEE Transactions on Microwave Theory and Techniques,vol.53,no.10,pp.3106-3112,October 2005 Y.J.Yoon,Y.Lu,RobertC.Frye,M.Y.Lau,P.R.Simith,L.Ahlquist,D.P.Kossives“Design and characterization of multilayer spiral transmission-line baluns” IEEE Transactions on Microwave Theory and Techniques,vol.47,no.9,pp.1841-1847,September 1999 X.Huang, K.D.Ngo, “Design technique for a spiral planar winding with geometric radii”, IEEE Transactions on Aerospace and Electronic Systems, pp.825-830,April 1996 N. Marchand, “Transmission-line conversion transformers” Electronics, vol. 17, pp. 142 - 145, 1944 W.K.Roberts, “A new wide-band balun.”IRE.,vol.45,pp.483-486,1957 Y.J.Yoon,Y.Lu,C.Robert,Frye,M.Y.Lau,P.R.Simith, “A silicon monolithic spiral transmission-line balun with symmetrical design” IEEE Electron Device Letters,vol.30,no.4,pp.182-184,April 1999. M. Shimozawa, , K. Itoh, Y. Sasaki, H. Kawano, Y. Isota, O. Ishida, “A parallel connected Marchand balun using spiral shaped equal length coupled lines,” IEEE Microwave Symposium Digest, pp.1737-1740 ,1999. Y.J.Yoon,Y.Lu,C.Robert,Frye,M.Y.Lau,P.R.Simith, “Modeling of monolithic RF spiral transmission-line balun” IEEE Transactions on Microwave Theory and Techniques,vol.49,no.2,pp.393-395,February 2001. Q. Sun., J. Yuan, V, Vo., A. Rezazadeh, “ Design and realization of spiral Marchand balun using CPW multilayer GaAs technology,” Proceedings of 36th European Microwave Conference, pp.68-71,September 2006. B. H.Lee,D.S.Park,S.S.Park,M.C.Park, “Design of new three-line balun and its implementation using multilayer configuration” IEEE Transactions on Microwave Theory and Techniques,vol.54,no.4,pp.1405-1413,April 2006. J.X.Liu,C.Y.Hsu,H.R.Chuang,C.Y.Chen, “A 60-GHz millimeter-wave CMOS Marchand balun,” IEEE RFIC Symposium pp.445-448,june 2007. B.Sewiolo,M.Hartmann,B.Waldmann,R.Weigel, “An ultar-wideband coupled-line balun using patterned ground shielding structures” IEEE Radio and Wireless Symposium, pp.459-462,January 2008. Z.Y.Zhang, Y.X.Guo, L.C.Ong, M.Y.W.Chia ,“ A new planar Marchand balun,” IEEE Microwave Symposium Digest, pp.1207-1210, June, 2005. J.R.Long, “Monolithic transformers for silicon RFIC design”, IEEE Journal of Solid-State Circuits,vol.35,no.9,pp.1368-1381,September 2000. C.Lu,O.Charlon,M.Bracey, “Integrated Balun Design for Dual-band WLAN a/b/g Applications” IEEE International Symposium on Circuits and Systems,pp.1296-1299,May 2008. K.Liu, R.Emigh, R.C Frye,“Small form-factor integrated balun with complex impedance matching,” IEEE Microwave Symposium Digest, pp.1239-1242, June 2008. J.Wang,W.J Zhang, Z.P. Yu, “ The design of a planar-spiral transformers balun used in RF/MW based on 0.13 um CMOS process,” International conference on Mircriwave and Millimeter Wave Technology,pp.1- 4, April, 2007. Z.Tao, “Balun Design for Silicon RF Integrated Circuis” IEEE International Conference on Integration Technolngy pp.249-252 March,2007. T.Liang, J.Gillis, D.Wang, P.Copper, “Design and modeling of compact on-chip transformer/balun using multi-level metal windings for RF integrated circuits” 2001 IEEE Radio Frequency Integrated Circuits Symposium. W.Z.Chen, W.H.Chen, K.C.Hsu, “Three-dimensional fully symmetric inductors,transformer,and balun in CMOS technology” IEEE Transactions on Circuits and Systems,vol.54,no.7,pp.1413-1423,July 2007. C.Tsui, K.Y.Tong, “Modelling of multilayer on-chip transformers” IEEE Proc-Microw.Antennas Propag.vol.15,no.5,October 2006. G.Felic, E.Skafidas, “An integrated transformer balun for 60GHz silicon RFIC design” IEEE Conference,pp.541-542,July 2007. A. L. Niknejad, R. G. Meyer, “Design, simulation and application of inductors and transformers for Si RF ICs,” IEEE Circuits and Devices Magazine,vol.17,pp.59-59,May 2001. W. B. Kuhn, N. M. Ibrahim, “ Analysis of current crowding effects in multiturn spiral inductors” IEEE Transactions on Microwave Theory and Techniques, vol. 49,no.1,pp.31-38,January 2001. B.L.Ooi, D.X.Xu, P.S.Kooi, F.J.Lin, “An improved prediction of series resistance in spiral inductor modeling with Eddy-current effect,” IEEE Transactions on Microwave Theory and Techniques, vol.50, no. 9, pp.1143-1149, September 2002. K.Y.Tong ,C.Tsui,“A physical analytical model of multilayer on-chip inductor,” IEEE Transactions on Microwave Theory and Techniques,vol.53, no.4, pp.1143-1149,April 2005. J.Zou,C.Liu,D.R.Trainor,J.Chen,Jose E. S.Aine, P. L.Chapman, “ Development of three-dimensional inductor using plastic deformation magnetic assembly(PDMA),” IEEE Transactions on Microwave Theory and Techniques,vol.51, no.4, pp.1067-1075,April 2003. Agilent control software IC-CAP 2004 (http://www.agilent.com) C.H. Chen, et al. “A general noise and S-parameter deembedding procedure for on-wafer high-frequency noise measurement of MOSFETs,” IEEE Transactions on Microwave Theory Techniques, vol.49, no.5,pp.1004-1005, May, 2001. L.Villegas, J.M.Samitier, J.Cane,C.Losantos, J.P.Bausells, “Improvement of the quality factor of RF integrated inductors by layout optimization,” IEEE Transactions on Microwave Theory And Techniques ,vol.48,no.1 pp.76-83, January 2000. H.M.Hsu. “Analytical formula for inductance of metal of various widths in spiral inductors” IEEE Transactions on Microwave Theory and Techniques,vol.51,no.8,pp.1343-1346,August 2004. F.W.Grover,“Inductance calculations working formulas and tables” J.C.Park,J.Y.Park, “Design of wideband LC balun embedded into organic substrate using coupled LC resonators” IEEE International Conference on Microelectronics, pp.85-88,December 2007.|
|摘要:||This thesis uses coupled-line theory  ,  to extract the odd and even mode capacitances of device, and to analyze the characteristics of on-chip Balun. The thesis mainly includes four experiment topics. The first topic addresses planar Marchand Balun. Adopting the approach of capacitance extraction to compare differences characteristics, the results show that the layout of overlap structure has better bandwidth and amplitude imbalance than planar structure,Adopting EM simulation, the bandwidth improves 2.5 times compared with the planar structure, moreover amplitude imbalance improves approximately 9% . The second topic describes the Balun design with various metal widths in metal coil. Using the design of various metal width to reduce metal resistance, keeping identical conditions of self-inductance,the results increase the Q values, and decrease the insertion loss. The DC resistance improvements approximately 12.5% . The third topic addresses the stacked Balun. The different layout is designed to compare device characteristics in the experiment, the equivalent capacitors of even and odd modes are calculated using device corss-section.In order to analyze the performances of amplitude imbalance, we obtain that the stacked structure causes high coupling factor. Therefore, measurement results shows that the amplitude imbalance achieves to 0.2 dB and the phase imbalance achieve to 0~8. The last topic describes stacked symmetry Balun design. Design different return layers to characterize device performances in experiment. The small even-mode capacitance is resulted from the series connection, and large odd-mode capacitance is due to the shunt connection of metal layers in proposed device. Therefore, the coupling factor of these devices approximated to the value of 0.984. Therefore, measurement result shows that the average amplitude imbalance achieves to 0.163 dB.|
|Appears in Collections:||電機工程學系所|
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