Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/84923
標題: An 83% Enhancement in the External Quantum Efficiency of Ultraviolet Flip-Chip Light-Emitting Diodes With the Incorporation of a Self-Textured Oxide Mask
摘要: We demonstrate here a 380-nm ultraviolet InGaN flip-chip (FC) light-emitting diode (LED) with self-textured oxide mask (STOM-FCLED) structures fabricated in a large-area (1125 × 1125 μm2) FC configuration. An 83% enhancement in the external quantum efficiency was achieved for the STOMFCLEDs when compared with FCLEDs without the STOM structure operating at an injection current of 350 mA. For STOM-FCLEDs operating at an injection current of 1000 mA, a light output of approximately 400 mW was obtained. These results could be attributed to the introduction of the STOM structure, which not only reduces the density of threading dislocation but also intensifies the LED light extraction.
URI: http://hdl.handle.net/11455/84923
文章連結: http://dx.doi.org/10.1109/LED.2012.2228462
Appears in Collections:材料科學與工程學系

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