Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/84956
標題: Fabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction
關鍵字: Silicide/Si heterostructured nanowire arrays
Glancing angle deposition
Size-dependent phase formation
摘要: This work develops a method for growing Ni-silicide/Si heterostructured nanowire arrays by glancing angle Ni deposition and solid state reaction on ordered Si nanowire arrays. Samples of ordered Si nanowire arrays were fabricated by nanosphere lithography and metal-induced catalytic etching. Glancing angle Ni deposition deposited Ni only on the top of Si nanowires. When the annealing temperature was 500°C, a Ni3Si2 phase was formed at the apex of the nanowires. The phase of silicide at the Ni-silicide/Si interface depended on the diameter of the Si nanowires, such that epitaxial NiSi2 with a {111} facet was formed at the Ni-silicide/Si interface in Si nanowires with large diameter, and NiSi was formed in Si nanowires with small diameter. A mechanism that is based on flux divergence and a nucleation-limited reaction is proposed to explain this phenomenon of size-dependent phase formation.
URI: http://hdl.handle.net/11455/84956
文章連結: http://dx.doi.org/10.1186/1556-276X-8-224
Appears in Collections:材料科學與工程學系

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.