Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/8622
標題: 低電壓氧化物半導體a-IGZO與高分子介電層薄膜電晶體
Low-Voltage a-IGZO TFT with Polymer Dielectric Layer
作者: 邱久容
Chiu, Chiu-Jung
關鍵字: amorphous oxide semiconductor
非晶氧化物半導體
TFT
薄膜電晶體
出版社: 電機工程學系所
引用: 1. N.F. Mott and E.A. Davis.,"Electronic processes in non-crystalline materials", Oxford Univ. Press, pp.590, 1979 2. Spear, W E | LeComber, P G, "Substitutional Doping of Amorphous Si ",Solid State Communications. Volume. 17, pp. 1193-1196. 1 Nov. 1975 3. F. Ebisawa, T. Kurokawa and S. Nara. J., "Electrical properties of polyacetylene/polysiloxane interface", APPLIED PHYSICS LETTERS , Volume.54, pp.3255–3259, Jun.1983 4. 陳坤暘,有機薄膜電晶體之高分子閘極介電層研究,國立清華大學2004年,七月 5. 林永昇,高效能透明有機薄膜電晶體,國立交通大學,2006年七月 6. 蔡仁傑, N型有機薄膜電晶體之研究,國立成功大學,2006年六月 7. P.F. Carcia, R.S. McLean, M.H. Reilly, et al., “Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering,” APPLIED PHYSICS LETTERS., Volume. 82, pp. 1117-1119, Feb. 2003. 8. Hideo Hosono, "Ionic amorphous oxide semiconductors: Material design,carrier transport, and device application", Journal of Non-Crystalline Solids, Volume.352, pp.851–858, Jun 2006 9. Narushima, S. et al. “Electronic structure and transport properties in the transparent amorphous oxide semiconductor 2CdO•GeO2.” Phys. Rev. B 66, 35203 ,2002 10. Nomura K, Ohta H, Takagi A, et al, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors", Nature, Volume:432, pp: 488-492, NOV 2004 11. Na JH, Kitamura M, Arakawa Y," High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes ",APPLIED PHYSICS LETTERS, Volume: 93, pp:063501, AUG 2008 12. Park JS, Jeong JK, Chung HJ, et al., "Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water " APPLIED PHYSICS LETTERS, Volume: 92, pp: 072104 , FEB 2008 13. Park JS, Jeong JK, Mo YG, et al., "Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment", APPLIED PHYSICS LETTERS, Volume: 90, pp: 262106 , JUN 2007 14. Hideo Hosono, “Transparent Amorphous Oxide Semiconductors (TAOS) for high performance TFTs”, Society for Information Display, pp:17 May 2007 15. Veres J, Ogier S, Lloyd G, et al., "Gate insulators in organic field-effect transistors ",CHEMISTRY OF MATERIALS, Volume:16, pp: 4543-455, NOV 2004 16. Klauk H, Halik M, Zschieschang U, et al." High-mobility polymer gate dielectric pentacene thin film transistors ", JOURNAL OF APPLIED PHYSICS, Volume: 92 ,pp: 5259-5263, NOV 2002 17. Noh JH, Kim CS, Ryu SY, et al., "Low-voltage-driven bottom-gate amorphous indium-gallium-zinc-oxide thin-film transistors with high dielectric constant oxide/polymer double-layer dielectric ",JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Volume:46, pp:4096-4098, JUL 2007 18. 施敏,半導體元件物理與製作技術,國立交通大學,pp:292-294,2002年九月 19. 陳志強,LTPS低溫複晶矽顯示器技術,全華科技圖書股份有限公司,,2004年十二月 20. Chang CC, Pei ZW, Chan YJ," Artificial electrical dipole in polymer multilayers for nonvolatile thin film transistor memory ",APPLIED PHYSICS LETTERS, Volume: 93, pp: 143302,OCT 2008 21. Hong Xiao, 半導體製程技術導論,培生教育出版集團,pp:223-224, 2004年九月 22. 陳文華,以射頻磁控法成長氧化鋅透明導電膜,國立成功大學, 2005年七月 23. Takagi A, Nomura K, Ohta H, et al.,"Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4",THIN SOLID FILMS, Volume: 486,pp: 38-41, AUG 2005 24. Wang W, Shi JW, Jiang WH, et al., “High-mobility pentacene thin-film transistors with copolymer-gate dielectric” MICROELECTRONICS JOURNAL, Volume: 38, Pages: 27-30, JAN 2007 25. Byung Du Ahn, et al., ” Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors”, APPLIED PHYSICS LETTERS, Volume: 93, pp: 203506 , Nov 2008 26. Yabuta H, Sano M, Abe K, et al.,” High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering”, APPLIED PHYSICS LETTERS , Volume: 89 , pp: 11212, SEP 11 2006 27. Suresh A, Wellenius P, Dhawan A, et al.,” Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors”, APPLIED PHYSICS LETTERS, Volume: 90, pp:123512 MAR 2007 28. Kim M, Jeong JH, Lee HJ, et al.,” High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper”, APPLIED PHYSICS LETTERS Volume: 90, pp: 212114, MAY 2007 29. Choi JH, Seo HS, Myoung JM,” Dual-Gate InGaZnO Thin-Film Transistors with Organic Polymer as a Dielectric Layer”, ELECTROCHEMICAL AND SOLID STATE LETTERS, Volume: 12, pp: H145-H148, 2009 30. Lim W, Kim S, Wang YL, et al.," High-performance indium gallium zinc oxide transparent thin-film transistors fabricated by radio-frequency sputtering ", JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 155, pp: H383-H385, 2008
摘要: 在這篇論文中,我們介紹操作在低電壓下氧化物半導體a-IGZO與共聚物介電層薄膜電晶體。本實驗以bottom gate的結構,在玻璃基板上製作,以旋轉塗佈技術製作高分子閘極氧化層,並以濺鍍方式在室溫下沉積a-IGZO半導體層。PVP薄膜和PVP加上a-IGZO薄膜的光穿透率皆達到80%,適合應用在軟性電子。未退火之前得到電子遷移率為3.4cm2/V-S,臨界電壓-0.8V,電流開關比10,次臨界擺幅3.29V/dec,利用後製程中的熱退火方式,得到電子遷移率為18cm2/V-S,臨界電壓2V,電流開關比103,次臨界擺幅3V/dec,使用高分子材料的絕緣層,讓我們的臨界電壓只有2V,電流到達飽和的臨界電壓也只需10V,所以利用高分子材料的絕緣層確實可以使操作電壓和臨界電壓降低,使用熱退火可以使元件性能提升。
In this study, we report a low voltage drived amorphous indium gallium zinc oxide (a-IGZO) thin film transistor with polymer dielectric. The device was fabricated on glass substrate with a bottom gate structure. The poly(4-vinyl phenol) (PVP) thin film was used as the polymer gate dielectric by spin coating. For active layer, a-IGZO was then deposited by rf-magnetron sputtering at room temperature. The optical transmissions of single PVP film and PVP/IGZO stack layers are both as high as 80%. Therefore, PVP and a-IGZO are suitable for insulator and active layer of transparent flexible devices. Before thermal annealing, the TFT exhibit a mobility of 3.4cm2/Vs, a threshold voltage of -0.8V, on-off ratio of 10, a subthreshold swing of 3.29V/decade. After thermal annealing, the mobility and subthreshold swing of the devices are significantly improved. The TFT exhibited with a mobility of 18 cm2/Vs, threshold voltage of 2V, on-off ratio of 103 and subthreshold swing of 3V/decade. The operating voltage was as low as 10V. The polymer gate dielectric of PVP ensure a low operating voltage and threshold voltage for the a-IGZO TFT.
URI: http://hdl.handle.net/11455/8622
其他識別: U0005-2306200917334600
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2306200917334600
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