Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/90506
標題: Structural and Optical Characterization of GaN deposited on (111) Si using Er2O3/Gd2O3 buffer layer
生長於氧化鉺/氧化釓緩衝層(111)面矽基板上氮化鎵薄膜結構與光學特性之研究
作者: Ko-Ying Lo
羅可瑩
關鍵字: X光繞射
XRD
引用: [1] S. Nakamura, Science. 281, 956 (1998). [2] W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, Appl. Phys. Lett., 75, 1360 (1999). [3] K. Shenai, R. S. Scott, and B. J. Raliga, IEEE TRANSACTIONS ON ELECTKON DEVICES 30, 9 (1989). [4] A. Krost and A. Dadgar, Phys. Stat. Sol. (a) 194, No. 2, 361–375 (2002). [5] A. Dadgar, T. Hempel, J. Blasing, O. Schulz, S. Fritze, J. Christen, and A. Krost, Phys. Stat. Sol. C 8, No. 5, 1503–1508 (2011). [6] E. Feltin, B. Beaumont, M. Laugt, P. de Mierry, P. Vennegues, H. Lahreche, M. Leroux, and P. Gibart, Appl. Phys. Lett.,79, 3230 (2001). [7] A. Krost, A. Dadgar, Materials Science and Engineering B93 (2002) 77-84. [8] S. Fritze, P. Drechsel, P. Stauss, P. Rode, T. Markurt, T. Schulz, M. Albrecht, J. Blasing, A. Dadgar, and A. Krost, J. Appl. Phys. 111, 124505 (2012). [9] S. Tanaka, Y. Kawaguchi, N. Sawaki, M. Hibino, and K. Hiramatsu, Appl. Phys. Lett., 76, 2701 (2000). [10] David P. Norton, Materials Science and Engineering R 43 (2004) 139–247. [11] F. E. Arkun, M. Lebby, R. Dargis, R. Roucka, R. S. Smith, A. Clark, ECS Transactions, 50 (9) 1065-1071 (2012). [12] R. Dargis, A. Clark, F.E. Arkun, and R. Smith, ECS Transactions, 58 (7) 243-248 (2013). [13] F. Erdem Arkun, Rytis Dargis, Andrew Clark, Robin S. Smith, Michael Lebby Jeffrey M. Leathersich, F. Shahedipour-Sandvik, ECS Transactions, 58 (4) 455-461 (2013). [14] C. Kittel, 'Introduction to Solid State Physics' 8th edi. , Chap.21, John Wiley& Sons Inc. (2005). [15] Yang Xiang, Communication in Computational Physics, 1, No. 3, 383-424 (2006). [16] J. P. Hirth and J. Lothe, Theory of dislocation 2nd., New York (1982). [17] Z. T. Chen, K. Xu, L. P. Guod, Z. J. Yang, Y.Y. Su, X. L. Yang, Y. B. Pan, B. Shen, and H. Zhanga, G. Y. Zhang, J. Cryst. Growth, 294, 156-161 (2006). [18] John Price Hirth, Jen Lothein, 'Thoery of Disloctions',McGraw-Hill (1968). [19] D. Hull and D. J. Bacon, 'Introduction to Dislocations' (Inter. Ser. On Mater. Sci. and Technol. 37, (1983) 3rd ed., p. 115. [20] Michael Lebby, Andrew Clark and Guoying Ding, Engineered substrates, Technology, 18, 5, (2012). [21] M. S. Rahman, E. K. Evangelou, I. I. Androulidakis, and A. Dimoulas, Electrochemical and Solid-State Letters, 12 _5_ H165-H168 _2009_. [22] M. P. Singh, C. S. Thakur, K. Shalini, N. Bhat, and S. A. Shivashankar, Appl. Phys. Lett., 83, 14 (2003). [23] V. Mikhelashvili, G. Eisenstein, and F. Edelmann, J. Appl. Phys., 90, 5447 (2001). [24] 陳力俊等,材料電子顯微鏡學,儀器科技研究中心 (2006) [25] J. W. Edington, Practical Electron Microscopy in Materials Science, chap.3, Van Nostrand Reinhold (1976). [26] J. Goldstein, 'Scanning Electron Microscopy and X-Ray Microanalysis' 3rd, Plenum (2003). [27] David B. Williams, C. Barry Cater, 'Transmission Electron Microscopy: A Textbook for Materials'. [28] 許樹恩, 吳泰伯.'X光繞射原理與結構分析',國科會精密儀器發展中心 (1992). [29] V. Narayanan, K. Lorenz, W. Kim, and S. Mahajan, Appl. Phys. Lett. 78 (2001) 1544. [30] K. Horibuchi, N. Kuwano, K. Oki, Y. Kawaguchi, N. Sawaki, and K. Hiramatsu, Phys. Status Solidi A 180 (2000) 171. [31] W. L. Wang, J. R. Gong, C. L. Wang, W. T. Liao, J. L. He, Y. C. Chi, and J. B. Shi, Jpn. J. Appl. Phys. 45 (2006) 6888. [32] Ph. Komninou, J. Kioseoglou, G. P. Dimitrakopulos, Th. Kehagias, and Th. Karakostas, Phys. Status Solidi A 202 (2005) 2888. [33] X. H. Wu, L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 80 (1996) 3228. [34] S. K. Mathis, A. E. Romanov, L. F. Chen, G. E. Beltz, W. Pompe, and J. S. Speck, J. Cryst. Growth 231 (2001) 371. [35] Dodson B W. J. Cryst. Growth 111 376-82 (1991). [36] Stampfl, C. and C. G. Van de Walley. Physical Review B 57 (24): R15052-R15055 (1998) [37] K. P. Liu, K. Y. Yen, P. Y. Lin, J. R. Gong, K. D. Wu, and W. L. Chen, J. Vac. Sci. Technol. A 29 (2011) 03A101-1. [38] E. Feltin, B. Beaumont, M. Laugt, P. de Mierry, P. Vennegues, H. Lahreche, M. Leroux, and P. Gibart, Appl. Phys. Lett. 79 (2001) 3230. [39] A. Strittmatter, A. Krost, M. Strasburg, V. Turck, D. Bimberg, J. Blasing, and J. Christen, Appl. Phys. Lett. 74 (1999) 1242. [40] C. Kisielowski, J. Kru‥ger, S. Ruvimov, T. Suski, J. W. Ager III, E. Jones, Z. Liliental-Weber, M. Rubin, and E. R. Weber, Physical Review B 54 (1996) 24. [41] S. Schamm, P. E. Coulon, S. Miao, S. N. Volkos, L. H. Lu, L. Lamagna, C. Wiemer, D. Tsoutsou, G. Scarel, and M. Fanciulli, Journal of The Electrochemical Society, 156 (2009) 1. [42] Maria Losurdo,* Maria M. Giangregorio, Pio Capezzuto, Giovanni Bruno, Roberta G. Toro, Graziella Malandrino, Ignazio L. Fragala, Lidia Barreca, Eugenio Tondello, Alexandra A. Suvorova, Dongxing Yang, and Eugene A. Irene, Adv. Funct. Mater.17 (2007) 607–3612.
摘要: 本論文主要藉由X光雙晶繞射曲線(DCXRC),高解析穿透式電子顯微術(HR-TEM),及光激螢光能譜(PL),探討生長於氧化鉺/氧化釓緩衝層(111)面矽基板上氮化鎵薄膜結構與光學特性之研究。藉由比較氮化鎵的對稱面(0002)平面與非對稱面(11 ¯02)及(12 ¯12)平面的DCXRC訊號,發現生長於氧化鉺/氧化釓緩衝層(111)面矽基板上氮化鎵薄膜有較多屬於a型的貫穿式差排。再由DCXRC的半高寬(FWHM)顯示出,氮化鎵(11 ¯02)及(12 ¯12)平面其平面與平面之間的變形,主要來自於柏格向量具備1/3 <12 ¯10>分量之a型及a+c型貫穿式差排所貢獻。藉由TEM影像消失準則分析研究觀察到薄膜內部的差排缺陷分布及型態。HRTEM更進一步觀察生長於氧化鉺/氧化釓緩衝層(111)面矽基板上靠近氮化鎵-氧化物介面附近之氮化鎵薄膜,有明顯的Frankel部分差排存在,這顯示靠近異質界面之氮化鎵有很多疊差形成。最後由常溫及低溫PL能譜指出用氧化鉺/氧化釓緩衝層可以達到高品質的氮化鎵薄膜。
The structural and optical characteristics of GaN film deposited on Er2O3/Gd2O3-coated (111) Si were studied using double-crystal x-ray rocking curve (DCXRC), high resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) spectroscopy in this thesis. By comparing the DCXRC signals of (11 ¯02)GaN and (12 ¯12)GaN asymmetric planes and (0002) GaN symmetric plane, respectively, it was found that, most of the TDs in GaN of the GaN/ Er2O3/Gd2O3/(111)Si sample are type a TDs in nature. Based on the results of DCXRC studies, it is believed that the FWHM of (11 ¯02)GaN and (12 ¯12)GaN asymmetric planes are primarily due to the contributions of the 1/3 <12 ¯10>GaN components of the Burgers vectors of type a and type c+a TDs on the interplanar spacing distortions of (11 ¯02)GaN and (12 ¯12)GaN planes in GaN of the GaN/ Er2O3/Gd2O3/(111)Si sample. Using invisibility criterion g ∙ b = 0, various types of dislocations in GaN film were further identify. HRTEM observations revealed the presence of extrinsic SFs and Frankel PDs in GaN near the GaN/ Er2O3/Gd2O3 hetero-interface. Strong PL emissions indicate that high quality GaN can be achieved by employing certain optimized Er2O3/Gd2O3 buffer layer structures.
URI: http://hdl.handle.net/11455/90506
文章公開時間: 2015-12-16
Appears in Collections:物理學系所

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.