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標題: Characteristics and UV detectors applications of Co-doped ZnO nanostructures grown by PLD
作者: Tzu-Ching Hsu
關鍵字: Co-doped ZnO
nanorod structure
pulsed laser deposition
ultraviolet photodetector
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摘要: In this research, the Co-doped ZnO (CZO) nanorod structures with the thickness around 1.5 m were grown on Si substrates by pulsed laser deposition (PLD) equipped with a KrF excimer laser. The target composition for the preparation of CZO nanorods was selected to Co0.05Zn0.95O. Moreover, the CZO nanorod structures were used for the photodetector applications. During the growth of CZO nanorod structures, the GaN and CZO thin films were employed as the seed layers, respectively. Additionally, the conditions consisting of substrate temperature, gas atmosphere, laser repetition rate, laser pulse and annealing treatment were modified to prepare various seed layers. There are ten seed layers deposited in this study. After growing the CZO nanorod structures on the seed layers, the structural, morphological, and magnetic characteristics of these CZO samples were investigated. Then, the CZO nanorod structures were used to fabricate the metal-semiconductor-metal (MSM) ultraviolet photodetectors, and the device performances were also analyzed. Based on the observations by transmission electron microscopy and the measurements by x-ray diffraction, it can be found that the crystal structure of CZO nanorods are belonged to polycrystalline and wurtzite structure. The wurtzite structure of CZO nanorod is the same with that of the conventional ZnO materials. This confirms that the crystal structure of CZO nanorod can''t be transformed by doping the Co element.The results of Raman measurements indicate that the Co elements are indeed doped into these nanorods. In addition, according to the results of magnetization versus magnetic field strength, it reveals that the saturation magnetization value of CZO nanorod structure is increased with increasing the substrate temperature. The maximum saturation magnetization value of CZO nanorod structure can reach to 2.5 × 10-5 emu. Furthermore, when the GaN seed layer was grown at the substrate temperature of 950 C without introducing any gas, the ultraviolet photodetector fabricated with the CZO nanorod structure possesses the optimum device performances. At a bias voltage of 5 V, the signal-to-noise ratio between the dark current and photocurrent of this photodetector is 1.44 × 103, while its responsivity is measured to be 1.18 × 104 A/W (at a wavelength of 380 nm).
本論文使用脈衝雷射沉積(Pulsed Laser Deposition,PLD)成長氧化鋅摻雜鈷奈米柱在矽基板上,希望藉由晶種層的不同改變CZO奈米柱之光電特性,且研究其奈米柱因晶種層的不同而改變的特性以及應用於金屬-半導體-金屬(metal-semiconductor-metal, MSM)光感測器的製作。在本論文一開始藉由調變基板溫度、成長氣體氛圍、雷射頻率、雷射發數以及退火製程的實施,共鍍置了十種晶種層,再經由脈衝雷射剝離CZO(Co0.05Zn0.95O)靶材來成長CZO奈米柱,最後將其樣品分別做特性量測分析,進而歸納出最佳成長晶種層之條件。 藉由掃描式電子顯微鏡觀察CZO奈米柱表面形態,利用穿透式電子顯微鏡觀察其結晶型態以及利用X光繞射分析作結晶分向之分析,發現CZO奈米柱與wurtzite晶型的氧化鋅的繞射圖譜相符合,為多晶結構,證明氧化鋅並不會因為鈷的摻雜而改變原六方纖鋅礦結構,經由AFM分析了解溫度跟表面粗糙度之關係,利用拉曼分析判斷CZO奈米柱中的鈷摻雜以及局部振動之理論,再來分析磁滯曲線,發現基板溫度越高的情況下,其飽和磁化強度越大,約為2.5 × 10-5 emu,最後做成光電元件量測其光以及暗電流來計算比值及光響應值,發現當晶種層材料使用GaN、成長過程中沒有通入氣體、且其晶種層成長溫度為950 C時,成長在此晶種層上面的CZO奈米柱,其製作的光感測器在5V偏壓下,有最好的光暗電流比值1.44 × 103,且具有高響應值1.18×10+4 A/W(@波長380 nm)。
文章公開時間: 10000-01-01
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