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標題: First-Principles Studies of Er2O3(110)/Si(001) Heterostructures
作者: Yen- Wei Chen
關鍵字: first-principles calculations
interfsce energy
valence band offset

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摘要: The interfacial energy and valence band offset of the cubic Er2O3(110) epitaxially grown on Si(001) substrate are investigated in thesis by conducting first-principles within total-energy density functional calculations. The most favorable interfacial structure between Er2O3(110) and Si(001) is also deduced in order to realize its atomic arrangement. This work proposes several favorable interfacial structures as follows: 1. four-coordinated Si bonded with single Er-Si, single O-Si, and double Si-Si; 2. four-coordinated Si bonded with double Er-Si and double Si-Si; 3. four-coordinated Si bonded with double O-Si and double Si-Si. Consequently the oxidation of Si(001) surface is considered to be beneficial to the subsequently exitaxial growth of Er2O3(110). Moreover, the study on the band offset of Er2O3(110)/Si(001) reveals the lowest interfacial energy at -2.23 eV. This result agrees with the previous works.
本論文係以第一原理計算(First-principles)基於密度泛函理論(Density functional theory, DFT)研究氧化鉺薄膜異質磊晶成長於矽基板之界面能與能帶偏移,並透過分析Er2O3(110)/Si(001)最穩定異質界面模型以研究氧化鉺薄膜在界面處之原子排列。在Er2O3(110)/Si(001)異質界面之界面能研究中,最穩定界面結構鍵結為配位數4之Si原子、鍵結包括1個Er─Si鍵、1個O─Si鍵及2個Si─Si鍵與配位數4之Si原子,鍵結包括2個Er─Si鍵、2個Si─Si及配位數4之Si原子,鍵結包括2個O─Si鍵、2個Si─Si鍵鍵,證明矽基板氧化後將有助於氧化餌後續磊晶成長,而界面能與原子間鍵長壓縮量或異質界面應變量是正比關係。在Er2O3(110)/ Si(001)異質界面之能帶偏移(Band offset)研究中,最穩定界面結構與界面能研究相同,能帶偏移計算結果得出氧化鉺(110)與矽(001)最低值為-2.23 eV,結果證實此界面結構鍵結,使我們得到高品質氧化鉺磊晶薄膜。
文章公開時間: 10000-01-01
Appears in Collections:精密工程研究所



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