Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/91795
標題: Building the Model of Blue LED Flip Chip
覆晶藍光LED光源模型之建置
作者: Jeng-Yang Chen
陳政揚
關鍵字: LED
Optical model
Optical simulation
Optical measurement
發光二極體
光學模型
光學模擬
光學量測
引用: [1]H. J. Round, Elect. Worm 49, 309 (1907). [2]N.Holonyak and S.F.Bevacqua, 'Coherent (visible) light emission from Ga(As1-xPx) junctions' , Appl.Phys.Lett.1,82-83 (1962). [3]H. Amano, N. Sawaki, I. Akasaki, and T. Toyoda, 'Metal organic vapor phase epitaxial growth of a high quality GaN film [4]Y. Shimizu, K. Sakano, Y. Noguchi, and T. Moriguchi, “Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material,” U.S. Patent 5,998,925 (1999) [5]廖雪峰,”2006年產業展望” ,產業報告,民國94年12月 [6]A. A. Gaertner, ”LED Measurement Issues,”2002 NIST Measurement Course on Photometry,Radiometry and Colormetry,Lecture 15,2002. [7]賴永昌,”LED光電特性量測系統之開發”,屏東科技大學機械工程所碩士論文,民國93年。 [8]黃志銘,”大面積發光二極體二維發光分佈模擬與量測”,中央大學光電科學研究所碩士論文,民國92年。 [9]李李薇,”新型高功率LED背光模組設計與模擬”,中興大學精密工程所碩士論文,民國95年。 [10]W.K. Wang, D.S. Wuu, W.C. Shih, J.S. Fang, C.E. Lee, W.Y. Lin, P. Han, R.H. Hormg, T.C. Hsu, T.C. Huo, M.J. Jou, A. Lin, and Y.H. Yu, “Near-ultraviolet InGaN/GaN light-emitting diodes grown on patterned sapphire substrates,” Vol. 44, pp. 2512, 2005 [11]H.W. Huang, C.H. Lin, J.K. Huang, K.Y. Lee, C.F. Lin, C.C. Yu, J.Y. Tsai, R. Hsueh, H.C. Kuo,S.C. Wang, “Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate by nano-imprint lithography,” Materials Science and Engineering B, 164,2009 [12]A. Murai, D.B. Thompson, H. Hirasawa, N. Fellows, S. Brinkley, C.J. Won, M. Iza, U.K. Mishra, S.N. Nakamura, and S.P. Denbaars, Jpn, J. Appl. Phys. 47 pp.3522-3523 2008 [13]C.C. Sun, S.C. Chung, S.H. Yang, Y.W. Yu, W.T. Chien, H.K. Chen, and S.P. Chen, “High-directional light source using photon recycling with a retro-reflective Dome incorporated with a textured LED die surface,” Optics Express Vol. 21, No. 15, 2013. [14]S.H. Huang, R.H. Horng, K.S. Wen, Y.F. Lin, K.W. Yen, and D.S.Wuu, “Improved light extraction of nitride-based flip-chip light-emitting diodes via sapphire shaping and texturing,” IEEE Photonics Technol. Lett., 18, 2623 2006
摘要: LED is one of the promising light source which has the characteristics of low power consumption, small volume and no mercury pollution. Two well-known methods to increase luminous efficiency are LED-side roughness and design geometric patterned sapphire structure. But no LED Chip model has been proposed so far. Motivated by this point, this work employees optical simulation software called OptisWorks and optics principle to design the model of blue LED chip. With the verification of the simulation and experiment, we succeed in building the model of blue flip LED chip. Through the optical microscope and simulation we know the intensity distribution in the surface regions of LED is not very uniform. Through the side view of LED it is observed that the existence varies substalutially at different angles. The luminous existence is more concentrated at the bottom.The model of flip chip is investigated and built in the work, which improves the understanding of the top and side surfaces emission characteristics. This is helpful to future package and applications for blue LED flip chip.
LED相較於傳統白幟燈泡與日光燈有體積小、耗電量低、亦無汞污染之特性,為了提高LED的發光效率最常見的方法就是在LED的側面作表面粗化或是在藍寶石基板上設計幾何圖案,然而目前並無對LED晶粒提出合適的3維發光模型。 本論文利用光學模擬軟體OptisWorks結合光學原理設計覆晶藍光LED之光源模型。透過模擬與實驗之驗證與分析,我們成功建置覆晶藍光LED之光源模型。透過光學顯微鏡與模擬可以得知,強度在發光二極體表面分佈並非相當均勻,而透過LED的側面觀測也可得知,不同角度其發光分布也不盡相同,發光強度較強的區域都集中在底部附近。透過本研究,即可了解發光二極體之多面的發光變化,對未來覆晶的封裝與應用將有正面助益。
URI: http://hdl.handle.net/11455/91795
文章公開時間: 2017-07-29
Appears in Collections:精密工程研究所

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