Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/91925
標題: 不同乙烷/氨氣比例對以熱化學氣相沉積法製備之碳薄膜微結構影響
Effects of different Ethane/Ammonia ratios on the Micro- structure of carbon films prepared by thermal chemical vapor deposition.
作者: 歐瑜纓
Yu-Ying Ou
關鍵字: 乙烷
Ethane
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摘要: The effects of different ethane/ammonia ratios on the microstructure of carbon films prepared by thermal chemical vapor deposition are investigated. The deposition thickness and microstructure of the carbon film are analyzed by field emission scanning electron microscopy, X-ray diffractionmeter, Raman scattering spectroscopy, and X-ray photoelectron spectroscopy. Besides, the residual gases of deposition process are measured by residual gas analyzer. The experimental result shows that the deposition rate of carbon films inreases with increasing the ethane/ammonia ratios. The X-ray diffractionmeter results indicate that if the ethane/ammonia ratio increases, 2θ of the graphite (002) peak decreases from 26 to 25.22o and the grain size (Lc) diminishes from from 1.41 to 1.18 nm, but FWHM increases from 4.98 to 5.88o. The Raman results reveal that if the ethane/ammonia ratio increases, ωD show a decreases trend and ωG have no apparent trend, but the average grain size (La) and degree of ordering of carbon films decreases. The X-ray photoelectron spectroscopy results show that the sp2 structure in the carbon films decreases with increasing the ethane/ammonia ratio. The residual gas analyzer results demonstrate that the main residual gases include H2, NH2, NH3, C2H2, C2H3, and C2H4, and the secondary product gases contain CH3, C2H, and C2H6.
本篇論文主要是以熱化學氣相沉積法製備碳薄膜,並探討不同乙烷/氨氣比對碳薄膜微結構之影響。本實驗利用場發射掃描式電子顯微鏡、X光繞射儀、拉曼散射光譜儀、X光光電子能譜儀和殘留氣體分析儀分析碳薄膜的沉積厚度、微觀結構和製程上的殘留氣體種類。隨著乙烷/氨氣比增加,碳薄膜的沉積速率跟著上升。X光繞射光譜顯示,隨著乙烷/氨氣比例的增加,石墨 (002) 的2θ 從26 降至25.22o,FWHM從4.98升至5.88o,而Lc 也從1.41降至1.18 nm。拉曼散射光譜顯示,ωD呈現下降趨勢和ωG沒有明顯的趨勢,而平均晶粒大小(La)隨著乙烷/氨氣比例的增加而下降,因此碳薄膜的結構趨於無序。X光光電子能譜顯示碳薄膜的碳碳雙鍵 (sp2 C=C)含量會隨著乙烷/氨氣比例的增加而下降。由殘留氣體分析結果可知,氣相中的主要產物為H2、NH2、NH3、C2H2、C2H3和C2H4等,而二次產物包含了CH3、C2H和C2H 6。
URI: http://hdl.handle.net/11455/91925
其他識別: U0005-2601201522205400
文章公開時間: 2018-01-29
Appears in Collections:材料科學與工程學系

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