Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/91961
標題: 不同氮氣/乙烷比例對以電漿輔助化學氣相沉積法製備n型非晶質碳薄膜特性之影響
Effects of different nitrogen/ethane ratios on characteristics of n-Type amorphous carbon thin films fabricated by plasma enhanced chemical vapor deposition
作者: 黃嘉立
Jia-Li Huang
關鍵字: 電漿輔助化學氣相沉積法
n型非晶質碳薄膜
PECVD
n-Type amorphous carbon thin films
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摘要: The n-Type amorphous carbon thin films fabricated by plasma enhanced chemical vapor deposition using nitrogen/ethane (N2/C2H6) mixtures gases. The radio-frequency power, working pressure, and substrate temperature were kept at 150 W, 60 Pa, and 298 K, respectively. The carbon thin films thickness with identical thickness (about 40 nm). The plasma diagnostics, microstructures, optical, and electrical properties of carbon films were investigated. The experimental results indicate that when the N2/C2H6 ratio increases from 0 to 7.5, the activity species of C, C2, CN, NH, and CH increase, and thus, the deposition rate of carbon thin films also increases. Alternatively, as the N2/C2H6 ratio increases from 7.5 to 15, the C2H6 partial pressure decreases and activity species of C, C2, CN, NH, and CH are also decrease, thus, the deposition rate of carbon thin films will decrease. The carbon thin films fabricated at the N2/C2H6 ratio of 7.5 has a maximum graphitization degree, nitrogen-carbon bonds, nitrogen-hydrogen bonds, sp2 carbon bonds, and dielectric constant. However, it has the lowest optical band gap, and electrical resistivity. Finally, the n-Type amorphous carbon thin films of all kinds are deposited on p-type silicon to fabricate a-C:H(N)/p-Si devices.The a-C:H(N)/p-Si device at the N2/C2H6 ratio of 7.5 has an optimum electrical property, the built-in voltages in the a-C:H(N)/p-Si device are 1.33 V and an ideality factor of 1.43.
本論文之n型非晶質碳薄膜主要是以電漿輔助化學氣相沉積法利用氮氣/乙烷混和氣體製備。實驗過程中,射頻功率、工作壓力以及基材溫度為150 W、60 Pa以及298 K,而碳薄膜厚度固定為40 nm。本實驗針對電漿診斷、微觀結構、光學以及電學性質進行探討。實驗結果顯示,當N2/C2H6比例由0上升至7.5時,電漿中活性物種C、C2、CN、NH以及CH 數量增多致使碳薄膜的沉積速率增加,而當N2/C2H6比例由7.5上升至15時,電漿中活性物種C、C2、CN、NH以及CH 數量減少致使碳薄膜的沉積速率下降。N2/C2H6比例為7.5之碳薄膜其石墨化程度、C≡N、N-H鍵結、sp2 C=C相對含量以及介電常數有最大值。然而,其光學能隙以及電阻率則有最小值。本次實驗亦將所有比例之n型非晶質碳薄膜沉積於p型矽晶圓上,以製備出a-C:H(N)/p-Si元件。N2/C2H6比例為7.5時,所製備出之a-C:H(N)/p-Si元件具有最佳的電學性質,其內建電位為1.33 V,理想因子值為1.43。
URI: http://hdl.handle.net/11455/91961
其他識別: U0005-2606201511571300
文章公開時間: 2018-06-30
Appears in Collections:材料科學與工程學系

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