Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/92011
標題: 奈米鈷薄膜經氬離子束轟擊後之 微結構與磁性質研究
Microstructure and Magnetic Properties of Nano Cobalt Thin Films after Ar Ion Beam Bombardment
作者: 陳美婷
Mei-Ting Chen
關鍵字: 奈米

薄膜
Nano
Cobalt
Thin Films
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摘要: In this study, dual ion beam sputtering system is adopted to prepare the Aluminum / Cobalt films on silicon. The microstructure and magnetic properties of the Al/Co films through ion beam bombardment for ten minutes have been studied. In this experiment, X-ray diffraction analysis is used to confirm the lattice structure; Transmission electron microscopy (TEM) analysis is used to observe microstructure,including grain size, composition and structure and film thickness. The vibrating sample magnetometer (VSM) is used to measure the magnetic properties of thin films. Results shows that Al / Co films are polycrystalline, Co layer is a hexagonal close-packed (HCP) structure with a lattice constant of a = 4.5 Å, c = 4.11 Å; CoO layer is a FCC structure, lattice constant of a = 4.26 Å; Co3O4 is also a face-centered cubic structure with a lattice constant of a = 8.07 Å. Grain size of the cobalt thin film is estimated to be about 16 ~ 17nm. The magnetic measurements are made from room temperature (298K) and low temperature (180K),and Al / Co thin film plane is parallel to the applied magnetic field of 12 kOe. The results Show that is the coercive force at low temperature is about 50 Oe, the exchange bias field is about 5 Oe; room temperature, the coercive force is about 105 Oe, exchange bias field is about 3 Oe. At both the room temperature or 180K , the Al / Co film has no significant coercive force and the exchange bias.
本研究主要是利用雙離子束濺鍍系統,在矽基板上製備鋁/鈷薄膜,探討鋁/鈷薄膜經過離子束轟擊十分鐘後觀察其微結構及磁性質。 本實驗利用X-ray繞射分析確認其晶格結構;利用穿透式電子顯微鏡(TEM)分析晶粒大小、成分結構和薄膜厚度。並與XRD分析結果進行比對驗證;利用震動樣品磁力計(VSM)來分析薄膜的磁性質。 結果可知鋁/鈷薄膜為多晶結構,鈷層為六方最密堆積(H.C.P)結構,晶格常數為a=4.5Å、c=4.11 Å;氧化鈷為面心立方(F.C.C)結構,晶格常數a=4.26 Å; 四氧化三鈷也是面心立方結構,晶格常數為a=8.07 Å。鈷薄膜晶粒大小約16~17nm。 而磁性質量測方面,觀察室溫(298K)和低溫(180K)的鋁/鈷薄膜外加磁場12 kOe平行膜面之磁滯曲線可以得知,低溫下的矯頑磁力約50 Oe,交換偏壓約5 Oe;室溫下矯頑磁力約105 Oe,交換偏壓約3 Oe。無論是室溫或低於涅爾溫度的180K下,鋁/鈷薄膜都無明顯的矯頑磁力和交換偏壓場。
URI: http://hdl.handle.net/11455/92011
其他識別: U0005-0602201412201300
文章公開時間: 2014-02-07
Appears in Collections:材料科學與工程學系

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