Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/93903
DC FieldValueLanguage
dc.contributor.authorChien-Fu Tsengzh_TW
dc.contributor.authorTsung-Yen Tsaizh_TW
dc.contributor.authorYen-Hsiu Huangzh_TW
dc.contributor.authorMing-Tsang Leezh_TW
dc.contributor.authorRay-Hua Horngzh_TW
dc.date2015-12-15-
dc.date.accessioned2016-07-26T02:02:03Z-
dc.date.available2016-07-26T02:02:03Z-
dc.identifier.urihttp://hdl.handle.net/11455/93903-
dc.language.isoen_USzh_TW
dc.relationJournal of Crystal Growth, Volume 432, Pages 54–63zh_TW
dc.titleTransport phenomena and the effects of reactor geometry for epitaxial GaN growth in a vertical MOCVD reactorzh_TW
dc.typeJournal Articlezh_TW
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