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dc.contributor.authorHong-Ru Liuzh_TW
dc.contributor.authorSin-Liang Ouzh_TW
dc.contributor.authorShih-Yin Wangzh_TW
dc.contributor.authorDong-Sing Wuuzh_TW
dc.description.abstractThe 120-nm-thick cobalt-doped ZnO (Co-doped ZnO, CZO) dilute magnetic films deposited by pulsed laser deposition were employed as the n-electrodes for both lateral-type blue (450 nm) and green (520 nm) InGaN light emitters. In comparison to the conventional blue and green emitters, there were 15.9% and 17.7% enhancements in the output power (@350 mA) after fabricating the CZO n-electrode on the n-GaN layer. Observations on the role of CZO n-electrodes in efficiency improvement of InGaN light emitters were performed. Based on the results of Hall measurements, the carrier mobilities were 176 and 141 cm2/V s when the electrons passed through the n-GaN and the patterned-CZO/n-GaN, respectively. By incorporating the CZO n-electrode into the InGaN light emitters, the electrons would be scattered because of the collisions between the magnetic atoms and the electrons as the device is driven, leading to the reduction of the electron mobility. Therefore, the excessively large mobility difference between electron and hole carriers occurred in the conventional InGaN light emitter can be efficiently decreased after preparing the CZO n-electrode on the n-GaN layer, resulting in the increment of carrier recombination rate and the improvement of light output power.zh_TW
dc.relationApplied Physics Letters, Volume 109, Issue 2, 10. 021110 (2016)zh_TW
dc.titleOn the role of diluted magnetic cobalt-doped ZnO electrodes in efficiency improvement of InGaN light emitterszh_TW
dc.typeJournal Articlezh_TW
Appears in Collections:材料科學與工程學系


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