Please use this identifier to cite or link to this item:
|標題:||A Stress Response Model for Hole Mobility in the Inversion Layer of Ge MOSFETs|
|出版社:||JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY|
|摘要:||Hole-mobility calculation and a new piezo-resistance model for strained Ge PMOSFETs are presented. The piezo-resistance model is based on nine stress-independent piezo-resistance coefficients and takes into account the symmetry reduction compared with bulk Ge. The piezo-resistance coefficients are determined by Kubo–Greenwood mobility calculation for six particular stress configurations with a maximum stress level of 2 GPa. Finally, comparisons between Kubo–Greenwood mobility formula and the new piezo-resistance model for general stress configurations show a good agreement, thus validating this new approach.|
|Appears in Collections:||電機工程學系所|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.