Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/95799
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dc.contributor.author袁碩璜zh_TW
dc.contributor.authorShuo-Huang Yuanzh_TW
dc.contributor.authorFeng-Yeh Changzh_TW
dc.contributor.authorDong-Sing Wuuzh_TW
dc.contributor.authorRay-Hua Horngzh_TW
dc.date2017-05-18-
dc.date.accessioned2018-10-12T06:37:14Z-
dc.date.available2018-10-12T06:37:14Z-
dc.identifier.urihttp://hdl.handle.net/11455/95799-
dc.description.abstractThe effects of a corona-discharge plasma treatment on the performance of an AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor fabricated onto Si substrates were studied. The threshold voltage shifted from −8.15 to −4.21 V when the device was treated with an Al2O3 layer. The leakage current was reduced from 2.9 × 10−5 to 4.2 × 10−7 mA/mm, and the ION/IOFF ratio increased from 8.3 × 106 to 7.3 × 108 using the corona-discharge plasma treatment, which exhibited an increase of about two orders of magnitude. The device exhibited excellent performance with a subthreshold swing of 78 mV/dec and a peak gain of 47.92 mS/mm at VGS = 10 V.zh_TW
dc.language.isoen_USzh_TW
dc.publisherCRYSTALSzh_TW
dc.relationCrystals 2017, 7(5), 146zh_TW
dc.relation.urihttps://www.mdpi.com/2073-4352/7/5/146zh_TW
dc.subjectcorona-discharge plasmazh_TW
dc.subjectAlGaNzh_TW
dc.subjectGaNzh_TW
dc.subjectmetal-oxide-semiconductor high-electron mobility transistorzh_TW
dc.subjectAl2O3zh_TW
dc.titleAlGaN/GaN MOS-HEMTs with Corona-Discharge Plasma Treatmentzh_TW
dc.typeJournal Articlezh_TW
dc.identifier.doi10.3390/cryst7050146zh_TW
Appears in Collections:材料科學與工程學系
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