請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/96467
標題: 摻雜Cu對PbS之物理性質之影響及其在半導體敏化電池之特性
Effects of Cu doping into Pbs and its application in quantum dot-sensitized Solar cells
作者: 王澤毅
Ze-Yi Wang
關鍵字: 摻雜Cu對PbS之物理性質之影響及其在半導體敏化電池之特性
Effects of Cu doping into Pbs and its application in quantum dot-sensitized Solar cells
引用: [1] B. O'rEgan and M. Grätzel, Nature 353,737 (1991) [2] 陳佳靜, 國立中興大學物理所碩士論文 (2008) [3] P. Wang, S. M. Zakeeruddin, I. Exnar M. Grätzel, Chemical Communications 24, 2972(2002) [4] I. Robel, V. Subramanian, M. Kuno, P. V. Kamat, Journal of the American Chemical Society 128, 2385(2006) [5] Y. Ho, M. W. Lee, Electrochemistry Communications 26, 48(2013) [6] A. Tubtimtae, K. L. Wu, H. Y. Tung, M. W. Lee, G. J. Wang, Electrochemistry Communications 12, 1158(2010) [7] Y. Zhao, H. Pan, Y. Lou, X. Qiu, J. Zhu and C. Burda, J. Am. Chem. Soc. 131,4253-4261 (2009) [8]莊嘉琛,太陽能工程-太陽電池篇,臺北:全華科技(2008) [9]Tae-Ho Kim et al., 量子局限效,應專家知識社群, (2013)。 [10] P. Lukashev, R. W. L. Lambrecht, T Kotani., M. van Schilfgaarde, Phys. ReV. B 76, 195202/1–195202/14 (2007) [11] C. H. An , S. T. Wang, J. He, Z. X. Wang, J. Cryst. Growth 310,266–269 (2008) [12] L. Chen, Y. B. Chen, L. M. Wu, J. Am. Chem. Soc. 126, 16334–16335 (2004) [13] M. Page, O. Niitsoo, Y. Itzhaik, D. Cahen and Gary Hodes, Energy Environ. Sci 2, 220-223 (2009) [13] 楊惟智, 國立中興大學物理所碩士論文 (2013).
摘要: 銅鉛硫半導體材料熱穩定性高,能隙分佈在 0.5 eV 到2.5 eV 之間,銅鉛硫具有良好的光吸收能力。本研究主要以Pb-S半導體為基底,掺雜Cu量子點作為光敏化劑取代染料化太陽能電池中的染料。實驗手法以連續離子層沉積反應法成功得到Cu-Pb-S量子點,其中本次銅鉛硫量子點敏化太陽能電池製作過程中,當Pb-S 8 cycle與掺雜Cu (3) cycle的反應下,此時可測得Eg為1.39 %,而表現最佳的半導體敏化太陽能電池,短路電流為8.50 mA/cm2,開路電壓為0.43 V,電池的填充因數為 40.53 % ,在 100 mW/cm2 的太陽光強度照射下電池功率轉換效率為 1.48 % 。
The copper-lead-sulfur semiconductor material has high thermal stability and the energy gap is distributed between 0.5 eV and 2.5 eV. Copper, lead and sulfur have good light absorption capability. In this study, Pb-S semiconductor quantum dots, doped with Cu, were used as the photosensitizer to replace dyes in dye-based solar cells. The Cu-Pb-S quantum dots were successfully obtained by the successive ionic layer adsorption reaction method. The copper-lead-sulfur quantum dot sensitized solar cell was produced under the reaction of Pb-S (8) SILAR cycles and doped Cu (3) cycles. Eg was measured to be 1.39 %. The best-performing solar cell had a short-circuit current of 8.50 mA/cm2, an open circuit voltage of 0.43 V, a fill factor of 40.53 % and a light power conversion efficiency of 1.48 % under the illuminated solar power of 100 mW/cm2..
URI: http://hdl.handle.net/11455/96467
文章公開時間: 2019-08-08
顯示於類別:奈米科學研究所

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