請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/96469
標題: 熱注入法合成之PbS量子點及在膠體量子點太陽能電池的應用
Hot-Injection synthesis of PbS quantum dots for applications in colloidal quantum dot solar cells
作者: 黃舒崋
Shu-Hua Huang
關鍵字: PbS量子點
CdS薄膜
化學熱注入法
膠體量子點太陽能電池
PbS Quantum dots
CdS Thin film
Chemical hot injection
Colloidal quantum dot solar cell
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摘要: 本實驗主要以PbS量子點之合成及在膠體量子點太陽能電池的應用,研究分為三個部份:(1)在真空系統下利用化學熱注入法合成的PbS量子點,(2)利用射頻磁控濺鍍機(RF magnetron Sputtering) 濺鍍出CdS薄膜,(3)在進行PbS膠體量子點太陽能電池之研究前,首先將CdS濺鍍在FTO玻璃上,使形成CdS薄膜,此為 N-Type,再利用逐層Layer-By-Layer (LBL)沉積浸漬方法將以熱注入法合成之PbS製備出PbS Film,此為P-Type,最後濺鍍金(Au)電極,待完成膠體量子點太陽能電池架構後,並且皆利用紫外-可見光譜儀(UV-Vis Spectroscopy)、X-ray粉末繞射儀(XRD)、穿透式電子顯微鏡(TEM)、掃描電子顯微鏡(SEM)及原子力顯微鏡(AFM)分析所製備之材料特性。 本實驗經由SEM分析電池剖面圖得知CdS的厚度約100 nm,而經由UV-Vis Spectroscopy進行分析與計算後,能隙約為2.5 eV;藉由TEM得知PbS量子點顆粒大小約3.75 nm,且在1058 nm有出現激子峰(能隙約為1.2 eV),且PbS薄膜厚度約500 nm。目前已知在100 %的太陽光下(AM 1.5)能得到最佳電池轉換效率為0.26 %,短路電流為3.54 mA/cm2,開路電壓為0.36 V,填充因子為20.54 %,且針對此電池存放60天測量8次,發現有良好的穩定性。
This study focuses on the synthesis of PbS quantum dots as well as its application in colloidal quantum dot solar cells (CQDSCs). The fabrication of CQDSCs is divided into three parts:(1) Synthesis of PbS quantum dots by chemical hot injection. (2) Deposition of CdS thin films using RF magnetron sputtering. (3) Assembly of solar cells. First, a CdS film was sputtered on FTO glass. Second, a PbS colloidal quantum dot layer was coated on top of the CdS film using the layer-by-layer deposition method. Finally, an Au electrode was deposited to form the electrical electrode. The PbS/CdS forms a P/N-junction heterostructure solar cell. The synthesized material and the structure of the solar cell were characterized by US-VIS spectroscopy, XRD, TEM, SEM and AFM. The thickness of the CdS thin film, determined through SEM cross-sectional images, is about 100 nm. The energy gap (Eg) of CdS, calculated from UV-Vis absorption spectra, is about 2.5 eV. TEM images showed the particle size of PbS quantum dots to be ~ 3.75 nm, The PbS quantum dots show an exciton peak at 1058 nm, corresponding to an Eg of ~ 1.2 eV. The thickness of the PbS film is about 500 nm. Under 100 % sunlight illumination (AM 1.5) of 100 mW/cm2, the PbS CQD solar cell exhibited a power conversion efficiency of 0.26 %, a short circuit density of 3.54 mA/cm2, an open circuit voltage of 0.36 V and a fill factor of 20.54 %. The CQD solar cells showed high stability after repeated testing for eight times over a period of 60 days.
URI: http://hdl.handle.net/11455/96469
文章公開時間: 2021-07-23
顯示於類別:奈米科學研究所

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