請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/96476
標題: Pb-Sn-S 固態量子點敏化太陽能電池
Pb-Sn-S solid-state quantum dot sensitized solar cells
作者: 黃雅迎
Ya-Ying Huang
關鍵字: 鉛錫硫
量子點敏化太陽能電池
連續離子吸附沉積法
Pb-Sn-S
quantum dots sensitized solar cells (QDSSCs)
successive ionic layer adsorption and reaction (SILAR)
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摘要: 本實驗使用兩階段的連續離子層吸附反應法(successive ionic layer adsorption and reaction,SILAR)去合成PbS以及SnS兩種量子點,再藉由退火形成三元化合物的Pb-Sn-S半導體量子點依附在多孔性二氧化鈦之薄膜內,並將此量子點應用在固態量子點敏化太陽能電池。 為了確認是否合出材料為半導體Pb-Sn-S,因此用X-ray粉末繞射儀(Powder X-ray diffraction,XRD)分析Pb-Sn-S 的晶相,發現當中含有鉛的氧化物(Pb5O8),再經由UV-Vis 光譜分析計算得知能隙為1.65 eV,從TEM分析可以看到Pb-Sn-S顆粒大小為 14.47 nm,再從FESEM的頗面圖可以知道Spiro-OMeTAD + Pb-Sn-S + TiO2 的厚度為 2.573 μm,最後藉由EDS的結果可以知道鉛錫瑠的比例為Pb0.68Sn0.32S。 實驗的電池結構為固態電池,是由FTO + Blocking layer + TiO2 + 量子點 + Spiro-OMeTAD + 金電極組成,而最佳樣品的條件為PbS 10 cycle / SnS 15 cycle,浸泡時間皆為1分鐘,其轉換效率 (η)為 0.680 %,開路電壓(VOC)為 0.35 V,短路電流(JSC)為 3.76 mA / cm2,填充因子(fill-factor,FF)為 51.72 %。
This thesis describes the photovoltaic performance of lead tin sulfide (Pb-Sn-S) solid-state quantum dot-sensitized solar cells (QDSSCs). The light absorber material of ternary semiconductor Pb-Sn-S quantum dots were grown on a mesoporous TiO2 electrode using the two-stage successive ionic layer adsorption reaction (SILAR) process. UV-Visible spectroscopy showed the optimal energy gap of 1.65 eV. Energy–dispersive X-ray spectroscopy revealed the chemical composition ratio to be 0.68: 0.32: 1 (i.e. non-stoichiometric formula Pb0.68Sn0.32S). X-ray diffraction showed mixed phases of mostly Pb-Sn-S and lead oxide. Transmission electron microscopy showed an average particle size around 16.5 nm. Solid-state QDSSCs were fabricated from the synthesized Pb-Sn-S quantum dots using Spiro-OMeTAD as the hole-transporting material. Cross-sectional SEM image showed the thickness of the absorption layer to be ~ 2.5 μm. The best cell, prepared using the conditions of PbS – 10 SILAR cycles and SnS – 15 cycles, yielded an open circuit voltage (Voc) of 0.35 V, a short circuit current density (Jsc) of 3.76 mA/cm2, a fill-factor (FF) of 51.72 % and an efficiency (η) of 0.680 % under 100 mW/cm2 illumination.
URI: http://hdl.handle.net/11455/96476
文章公開時間: 2018-07-23
顯示於類別:奈米科學研究所

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