Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/97947
標題: 深紫外光氮化鋁鎵發光二極體N型電極之製作與電漿損傷修復研究
Fabrication of N-Electrodes for Deep-Ultraviolet AlGaN LEDs and its Recovery Studies after Plasma Damage
作者: 楊志毅
Chih-Yi Yang
關鍵字: 氮化鋁鎵
氨水水霧退火法
電漿損傷
深紫外光發光二極體
AlGaN
Ammonium Hydroxide (NH4OH) Mist Annealing Treatment
Plasma Damage
AlN
DUV-LEDs
引用: [1] Bandgap energy versus lattice constant of III-V nitride semiconductors at room temperature。 [2] 王梓育,「以有機金屬化學氣相沉積法製備低缺陷密度之氮化鋁模板與其在深紫外光發光二極體之應用」,國立中興大學材料科學與工程學系研究所博士論文,民國106年6月,第 1-3頁。 [3] Z. Dridi, B. Bouhafs, P. Ruterana, 'First-principles investigation of lattice constants and bowing parameters in wurtzite AlxGa1−xN, InxGa1−xN and InxAl1−xN alloys,' Semiconductor Science Technology, Vol. 18, No. 9, p. 850, 2003。 [4] D. A. Zakheim, I. P. Smirnova, I. V. Roznanskii, S. A. GureVich, M. M. Kulagina, E. M. ArakcheeVa, G. A. Onushkin, A. L. Zakheim, E. D. Vasil'eVa, and G. V. Itkinson,'High-power flip-chip blue light-emitting diodes based on AlGaInN,' Semiconductors, Vol. 39, pp. 851-855, 2005. [5] E. Letts, T. Hashimoto, M. Ikari, and Y. Nojima, 'DeVelopment of GaN wafers for solid-state lighting via the ammonothermal method,' Journal of Crystal Growth, Vol. 350, pp. 66-68, 2012. [6] 施敏原著,張俊彥譯著,半導體元件物理與製程技術,第三版,高立圖書有限公司,台北,台灣,pp. 192-206,2000。 [7] 李嗣涔,管傑雄,孫台平,半導體元件物理,三民書局,pp. 69-71,1995. [8] 施敏原著,張俊彥譯著,半導體元件物理與製程技術,第三版,高立圖書有限公司,台北,台灣,pp. 319-328,2000 [9] 莊達人,VLSI製造技術,高立書局,pp. 12-18,2002。 [10] D. K. Schroder, 'Semiconductor Material and DeVice Characterization,' Arizona State University, New Jersey: Wiley, pp. 157-161, 2006. [11] V. M. Bermudez, 'Study of oxygen chemisorption on the GaN(0001)-(1x1) surface,' Journal of Applied Physics, Vol. 80, p. 1190, 1996. [12] Giuseppe. G et al. 'Ohmic contacts to Gallium Nitride materials' [13] F. Braun, 'Ueber die Stromleitung durch Schwefelmetalle,' Annalen der Physik, Vol. 153, p. 556, 1874. [14] H. Morkoc, 'Nitride Semiconductors and DeVices,' Springer, pp. 196-197, 1999. [15] J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. C. Liu, C. M. Chang, W. C. Hung, 'Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases,' Journal of Applied Physics, Vol. 85, No. 3, pp. 1970-1974 ,1999 . [16] J. M. Lee, K. M. Chang, S. J. Park, 'Inductively Coupled Cl2/Ar/O2 Plasma Etching of GaN, InGaN, and AlGaN,' Journal of the Korean Physical Society, Vol. 37, pp. 842-845, 2000. [17] F. A. Khan, L. Zhou, V. Kumar, I. Adesida,'Plasma-induced damage study for n-GaN using inductively coupled plasma reactive ion etching,' Journal of Vacuum Science & Technology B, Vol.19, No. 6, pp. 2926-2929, 2001. [18] R. Cheung, B. Rong, E. van der Drift, W. G. Sloof, 'Etch mechanism and etch-induced effects in the inductively coupled plasma etching of GaN,' Journal of Vacuum Science & Technology B, Vol. 21, No. 4, pp. 1268-1272, 2003. [19] D. Selvanathan, F. M. Mohammed, J. O. Bae, I. Adesida, K. H. A. Bogart, 'Investigation of surface treatment schemes on n-type GaN and Al0.20Ga0.80N,' Journal of Vacuum Science & Technology B, Vol. 23, No. 6, pp. 2538-2544, 2005. [20] D. B. Ingerly, Y. Chen, R. S. William, T. Takeuchi, and Y. A. Chang, 'Low resistance ohmic contacts to n-GaN and n-AlGaN using NiAl.' Applied Physics Letters, Vol. 77, No. 3, pp. 381-384, 2000. [21] J. M. Lee, K. M. Chang, SW.Kim, C. Huh, I. H. Lee, SJ. Park, 'Dry etch damage in n-type GaN and its recovery by treatment with an N2 plasma,' Journal of Applied Physics, Vol. 87, No.11, pp. 7667-7670, 2000. [22] Y. J. Lin, C. T. Lee, 'Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to n-type GaN,' Applied Physics Letters, Vol. 77, No.241, pp. 3986-3988, 2000. [23] T. Hashizume, S. Ootomo, R. Nakasaki, S .Oyama, M. Kihara, 'X-ray photoelectron spectroscopy characterization of AlGaN surfaces exposed to air and treated in NH4OH solution' Applied Physics Letters, Vol. 76, No.20, pp. 2880-2882, 2000. [24] R. Meunier, A. Torres, M. Charlesa, E. Morvan, C. Petit-Etienne, O. Renault, and T.Billon, 'XPS analysis of AlGaN/GaN surface after chemical and N-containing plasma treatments' Journal of The Electrochemical Society, Vol. 50, No.3, pp. 451-460, 2012 [25] M. A. Miller, S. E. Mohney, A. Nikiforov, G. S. Cargill III, K. H. A. Bogart 'Ohmic contacts to plasma etched n - Al0.58Ga0.42N,' Applied Physics Letters, Vol. 89, pp. 132114-1-3, 2006. [26] X. A. Cao, H. Piao, S. F. LeBoeuf,J. Li, J. Y. Lin, H. X. Jiang, 'Effects of plasma treatment on the Ohmic characteristics of Ti∕ Al ∕Ti ∕Au contacts to n-AlGaN,' Applied Physics Letters, Vol. 89, pp. 082109-1-3, 2007. [27] X. A. Cao, H. Piao, J. Li, J. Y. Lin, H. X. Jiang, 'Surface chemical and electronic properties of plasma-treated n-type Al0.5Ga0.5N,' Appl. Physica Status Solidi A, Vol. 204,No. 10, pp. 3410-3416, 2007. [28] Y. Baia, J. Liua, P. Maa, B. Lia, J. Zhua, L. W. Guob, X. Y. Liua, 'Effect of radio frequency power on the inductively coupled plasma etched Al0.65Ga0.35N surface,' Journal of Applied Physics, Vol. 256, pp. 6254-6258, 2010. [29] W. Zhang, J. Zhang, Z. Wu, S. Chen, Y. Li, Y. Tian, J. Dai, C. Chen, Y. Fang, 'Improved Ohmic contacts to plasma etched n-Al0.5Ga0.5N by annealing under nitrogen ambient before metal deposition,' Journal of Applied Physics, Vol. 113, pp. 094503-1-4, 2013. [30] N. Nagata, T. Senga, M. Iwaya, T. Takeuchi, S. Kamiyama, I. kasaki'Reduction of contact resistance in V-based electrode for high AlN molar fraction n-type AlGaN by using thin SiNx intermediate layer' Physica Status Solidi C, Vol. 14, No.8, pp. 1-4, 2016. [31] Chris G. Van de Walle, C. Stampfl, J. Neugebauer, M. D. McCluskey, N. M. Johnson'Doping Of AlGaN Alloys' MRS Internet journal of nitride semiconductor research, 4S1, G10.4 (1999) [32] H. W. Jang, J. M. Baik, M. K. Lee, H. J. Shin, J. L. Lee'Incorporation of Oxygen Donors in AlGaN' Journal of The Electrochemical Society, Vol. 151, No.8, pp. G536-G540, 2004. [33] J. K. Kim, K. J. Kim, B. S. Kim, J. N. Kim, J. S. Kwak, Y. J. Park, J. L. Lee, 'Effects of surface treatment using Aqua regia solution on the change of surface band bending of p-type GaN,' Journal of Electronic Materials, Vol. 30, No.3, pp. 129-133, 2001. [34] H. W. Jang, C. M. Jeon, J. K. Kim, J. L. Lee, 'Room-temperature Ohmic contact on n-type GaN with surface treatment using Cl2 inductively coupled plasma,' Applied Physics Letters, Vol. 78, No.14, pp. 2015-2017, 2001. [35] M. Lapeyrade, A. Muhin, S. Einfeldt, U. Zeimer, A. Mogilatenko, M. Weyers, M. Kneissl, 'Electrical properties and microstructure of vanadium based contacts on ICP-RIE plasma etched n-type AlGaN:Si and GaN:Si surfaces, ' Semiconductor Science And Technology, Vol. 28, No.12, pp. 125015, 2013. [36] M. A. Miller, S.-K. Lin, S. E. Mohney 'V/Al/V/Ag contacts to -GaN and -AlGaN,' Journal of Applied Physics, Vol. 104, No.6, 2008. [37] JH. Wang, SE. Mohney, SH. Wang, U. Chowdhury, RD. Dupusi, 'Vanadium-based ohmic contacts to n-type Al0.6Ga0.4N,' Journal Of Electronic Materials, Vol. 33, No.5, pp. 418-421, 2004.
摘要: 本研究利用氨水水霧退火法修復因ICP-RIE電漿蝕刻造成損傷的n-Al0.58Ga0.42N表面。藉由改變氨水水霧退火溫度與氨水濃度,探討經氨水水霧退火法修復後的金屬/n-Al0.58Ga0.42N接面特性與其應用於深紫外光發光二極體的元件特性。 透過分析實驗結果得知,沒有經氨水水霧退火法修復之試片,金屬與n-Al0.58Ga0.42N之間雖然可形成歐姆接觸,其特徵電阻為5.28×10-3 Ω∙cm2。但在經過氨水水霧退火法修復後(退火溫度900C、氨水濃度3.6M、退火時間20分鐘)n-Al0.58Ga0.42N可以與金屬形成良好的歐姆接觸,並且使特徵電阻大幅降低至6.18×10-4 Ω∙cm2。根據X光射線光電子能譜儀的量測結果顯示,當經氨水水霧退火修復後之n-Al0.58Ga0.42N表面鋁與鎵的特徵峰都往高束縛能方向偏移,此現象經分析是與氧摻雜有關;而紫外光光電子能譜儀的量測結果分析得到的能帶來看,經氨水水霧退火法修復後因為六價的氧摻雜取代了原本五價的氮原子的位置,使自由電子濃度增加,造成費米能階往導電帶靠近,因此n-Al0.58Ga0.42N更容易與金屬形成歐姆接觸使電性大幅提升。 為了確認氨水水霧退火法修復n-Al0.58Ga0.42N對於280 nm 深紫外光發光二極體的影響,將最佳化之氨水水霧退火條件應用於元件上。與未經處理元件相比,其啟動電壓在350 mA的電流注入下由7.212 V下降至6.926 V,下降比例約4.1%,在20mA電流注入下EQE從0.27%增加至0.61%;研究結果顯示氨水水霧退火法可以有效降低金屬/n-Al0.58Ga0.42N的接面阻抗,使元件電性獲得改善。
In this thesis, an ammonium hydroxide (NH4OH) mist annealing treatment was used to repair plasma-etched damage n-Al0.58Ga0.42N surface. The effects of annealing temperature and ammonium hydroxide solution concentration on the characteristics of metal/n-Al0.5Ga0.5N and DUV-LEDs optoelectronic performance were investigated in detail. According to the experiment results, the specific contact resistance of the n-Al0.58Ga0.42N without treatment is 5.28×10-3 Ω∙cm2. As the plasma-etched sample treated with NH4OH mist anneal at 900C for 20 minutes with ammonium hydroxide concentration 3.6M, the contact resistance was significantly decrease to 6.18×10-4 Ω∙cm2. From XPS measurement results, the Al 2p and Ga 3d core peaks of n-Al0.5Ga0.5N both shift to higher binding energy after treatment, implying the Al-O and the Ga-O bond formation cause by oxygen doping in n-Al0.5Ga0.5N;From UPS measurement results, the fermi level of the treated sample was found closer to conduction band. This can be explained by the increment of free electron concentration by Oxygen doping. Under the injection current of 350 mA, the forward voltage of DUV-LEDs with NH4OH mist annealing treatment is 6.926 V which is 4.1% smaller than that of the without treatment one (7.212 V). Besides, the EQE of treatment sample gradually increase to 0.61% under the injection current of 20 mA. The experiment results strongly evidence that the specific contact resistance can be significantly reduction after NH4OH mist annealing treatment on plasma-damaged n-AlGaN. This treatment will benefit on the electrical and optoelectrical properties of DUV-LEDs.
URI: http://hdl.handle.net/11455/97947
文章公開時間: 10000-01-01
Appears in Collections:材料科學與工程學系

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