Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/9876
標題: The Growth and Properties of Silicon Seeding Layer Via AIC above the Eutectic Temperature
過共晶溫度下鋁誘發矽種晶層之成長與特性
作者: 黃建中
Huang, Chien-Chung
關鍵字: aluminium induced crystallization
鋁誘發
poly-si film
thin film solar cell
hall effect
多晶矽薄膜
薄膜太陽能電池
霍爾效應
出版社: 材料工程學研究所
摘要: Using polycrystalline silicon thin films as the seeding layers of the solar cell is a promising method. Because of higher mobility、better crystallization and reliability of polycrystalline silicon thin films in comparing with amorphous silicon solar cells; on the other hand, it can reduce the production cost effectively comparing with single crystalline silicon solar cells. More attentions are paid on the manufacture of poly- crystalline silicon thin films. Aluminium induced crystallization is the simple method to produce polycrystalline silicon thin films. The procedure temperature of the conventional aluminium induced crystallization is less than the eutectic temperature (577 ℃) of aluminium and silicon. In this study, we investigated the effect of annealing time on the carrier mobility at the temperature above 577℃.We also investigated the change of crystallization and microstructure of poly-silicon seeding layers with different thicknesses of Al layers and at different annealing temperatures. It is showed that the first induced poly-silicon layer is formed under the eutectic temperature(577℃). Higher mobility was obtained in specimens annealed at 600℃ than at 700℃. On the other hand, the specimen with thicker Al layer has better mobility. Specimens with 700nm thick Al layer and annealed at 600℃ for 30min,it have the minimum mobility (15±20% cm2/V‧s ) and maximum carrier concentration (3×1019 1/cm3 ),while the maximum mobility 67±6% cm2/V‧s was found in specimens with 700nm thick Al layer and annealed at 600℃ for 120min.
以多晶矽薄膜作為太陽能電池之種晶層,可以有效降低生產成本,亦能避免光劣化問題。相較於非晶矽太陽能電池而言,多晶矽薄膜具有較高之載子遷移率與較佳的結晶性和可靠度,使得多晶矽薄膜的製備與性質之研究成為目前的趨勢。 在製備多晶矽薄膜的方法中,鋁誘發的方式是較為簡單的,然而 ,傳統鋁誘發的溫度皆低於鋁、矽的共晶溫度(577℃),而本實驗將探討在高於共晶溫度(600℃、700℃)下,改變持溫時間對載子遷移率之影響,並改變不同鋁層厚度以及熱處理溫度觀察誘發多晶矽之微觀結構與結晶性變化。 實驗的分析結果中得到,隨著溫度的增加,第一層之誘發多晶矽的製備在低於共晶溫度時已大致完成。當溫度高於577℃時,由霍爾效應量測系統測得在600℃具有比700℃高的載子遷移率。並且較厚的鋁膜試片其載子遷移率亦較高。針對鋁膜厚度700nm的試片在600℃改變持溫時間,可以觀察到載子遷移率隨著時間增加先下降而後上升,在30min有最低的載子遷移率與較高的載子濃度分別為15±20% cm2/V‧s與3×1019/cm3 ±15%。在120min時,可得到最佳的載子遷移率為67±6% cm2/V‧s。
URI: http://hdl.handle.net/11455/9876
Appears in Collections:材料科學與工程學系

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