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|標題:||The preparation and characterization of the silicon oxide thin films deposited on PET substrates by radio-frequency magnetron sputtering|
|關鍵字:||silicon oxide thin films|
radio-frequency magnetron sputtering
由實驗的分析結果顯示，當鍍膜製程參數為氧氣流量比例40%、工作壓力2mTorr、射頻功率密度為4.9W/cm2及鍍膜時間為240分鐘的條件下，所沈積的氧化矽薄性質有較佳的阻絕水氣、氧氣滲透能力。其水氣滲透率為2.6 g/m2-day-atm，氧氣滲透率為16.1 cc/m2- day-atm，在撓曲實驗中，薄膜厚度較厚其抵抗撓曲測試的能力較差，產生較多的裂縫數量，造成其抵抗水氣、氧氣滲透能力變差。|
With the trends of developing lighter, thinner, shorter and smaller electronic information products, plastic materials substituting for glasses as the substrate of flat panel display can not only reduce FPD's weight but also possess unique advantages such as high impact resistance, continuous roll to roll processing technology and flexibility. Glass substrates can prevent the permeation of water vapors and oxygen effectively but plastic substrates can't. It would lower the device lifetime and quality. Therefore, gas barrier films would be deposited on the plastics substrates in order to solve the problem. In this study, silicon oxide films were deposited on the polyethylene terephthalate plastic substrates by reactive RF magnetron sputtering with a silicon target. Process parameters inclusive of oxygen flow ratio, work pressure, RF power density and deposition time were varied. The effects of these process parameters on the microstructure, chemical composition, surface roughness, light transmittance, water vapor transmission rate (WVTR), oxygen transmission rate (OTR) and flexible property were discussed. It is found that the silicon oxide film with the optimum protecting against vapor permeation were deposited as the oxygen flow ratio is 40%, the RF power density is 4.9 W/cm2, work pressure is 2 mTorr and deposition time is 240 min. The minimum WVTR is 2.6 g/m2-day-atm and OTR is 16.1 cc/ m2-day-atm. In the flexible test, the thicker silicon oxide films possess worse ability to defend the flexible tests. More cracks produced in thicker films during flexible tests result in higher permeation rate of water vapors and oxygen.
|Appears in Collections:||材料科學與工程學系|
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