Please use this identifier to cite or link to this item:
DC FieldValueLanguage
dc.contributor.authorChiu-Hsien Wuzh_TW
dc.contributor.authorKai-Wei Changzh_TW
dc.contributor.authorYu-Ning Lizh_TW
dc.contributor.authorZu-Yin Dengzh_TW
dc.contributor.authorKuen-Lin Chenzh_TW
dc.contributor.authorChien-Chung Jengzh_TW
dc.contributor.authorRen-Jang Wuzh_TW
dc.contributor.authorJau-Han Chenzh_TW
dc.description.abstractIn this study, we successfully developed amorphous Indium-Gallium-Zinc Oxide (IGZO) thin film under ultraviolet irradiation that demonstrated high stability and high sensitivity in a high-selectivity ozone gas sensor at ppb-level concentrations. The experimental results show that the sensor can detect ozone levels ranging from 55 to 400 ppb with high stability and high repeatability. We also successfully detected concentrations of 10–16 ppb. Ozone changes of 2–5 ppb can be clearly distinguished. Using electron spectroscopy for chemical analysis, we identified the element ratio and ozone detection ability. Higher sensitivity is realized in the presence of oxygen deficiency in metal oxide semiconductors. By controlling ultraviolet intensity, we found the sensitivity of thin film to ozone and nitrogen dioxide to be inversely proportional to light intensity and light intensity can be used to improve gas selectivity. Strong intensity irradiated to sensor causes low sensitivity and high selectivity.zh_TW
dc.relationSensors and Actuators B: Chemical, Volume 273, 10 November 2018, Pages 1713-1718zh_TW
dc.subjectGas sensorzh_TW
dc.subjectHigh selectivezh_TW
dc.subjectHigh sensitivityzh_TW
dc.subjectppb-Level ozone detectionzh_TW
dc.titleImproving the sensitive and selective of trace amount ozone sensor on Indium-Gallium-Zinc Oxide thin film by ultraviolet irradiationzh_TW
dc.typeJournal Articlezh_TW
Appears in Collections:奈米科學研究所


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.