Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/99164
標題: Micro Magnetic Field Sensors Manufactured Using a Standard 0.18-μm CMOS Process
作者: Lin, Yen-Nan
Dai, Ching-Liang
戴慶良
關鍵字: Hall effect
magnetic field
magnetotransistor
micro sensor
摘要: Micro magnetic field (MMF) sensors developed employing complementary metal oxide semiconductor (CMOS) technology are investigated. The MMF sensors, which are a three-axis sensing type, include a magnetotransistor and four Hall elements. The magnetotransistor is utilized to detect the magnetic field (MF) in the x-axis and y-axis, and four Hall elements are used to sense MF in the z-axis. In addition to emitter, bases and collectors, additional collectors are added to the magnetotransistor. The additional collectors enhance bias current and carrier number, so that the sensor sensitivity is enlarged. The MMF sensor fabrication is easy because it does not require post-CMOS processing. Experiments depict that the MMF sensor sensitivity is 0.69 V/T in the x-axis MF and its sensitivity is 0.55 V/T in the y-axis MF.
URI: http://hdl.handle.net/11455/99164
ISSN: 2072-666X
文章連結: https://www.mdpi.com/2072-666X/9/8/393
Appears in Collections:機械工程學系所

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