Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/99237
 標題: Effects of high substrate temperature during pulsed laser deposition on the quality of aluminum-doped gallium oxide and its photodetector characteristics 作者: Shuo-Huang Yuan袁碩璜Sin-Liang OuChao-Chun WangShiau-Yuan HuangChien-Ming ChenKu-Yen LinYi-An ChenDong-Sing Wuu 摘要: We report on the effects of substrate temperature (600–800 °C) on metal–semiconductor–metal photodetectors (PDs) fabricated with aluminum-doped gallium oxide (AGO) films by pulsed laser deposition. The crystal quality of the AGO films was improved by increasing the substrate temperature. Because of the AGO(400) appearance, the d-spacing of AGO$(\bar{2}01)$ decreased, whereas the strain of this plane increased. This could be explained by the formation of the AGO(400) plane in the films, generating a compressive strain in the AGO$(\bar{2}01)$ plane. The AGO PDs showed a maximum absorption at a wavelength of 240 nm, and the enhanced crystal quality would benefit the device performance. URI: http://hdl.handle.net/11455/99237 文章連結: https://iopscience.iop.org/article/10.7567/JJAP.57.070301 Appears in Collections: 材料科學與工程學系

Citations: