Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/99237
標題: Effects of high substrate temperature during pulsed laser deposition on the quality of aluminum-doped gallium oxide and its photodetector characteristics
作者: Shuo-Huang Yuan
袁碩璜
Sin-Liang Ou
Chao-Chun Wang
Shiau-Yuan Huang
Chien-Ming Chen
Ku-Yen Lin
Yi-An Chen
Dong-Sing Wuu
摘要: We report on the effects of substrate temperature (600–800 °C) on metal–semiconductor–metal photodetectors (PDs) fabricated with aluminum-doped gallium oxide (AGO) films by pulsed laser deposition. The crystal quality of the AGO films was improved by increasing the substrate temperature. Because of the AGO(400) appearance, the d-spacing of AGO$(\bar{2}01)$ decreased, whereas the strain of this plane increased. This could be explained by the formation of the AGO(400) plane in the films, generating a compressive strain in the AGO$(\bar{2}01)$ plane. The AGO PDs showed a maximum absorption at a wavelength of 240 nm, and the enhanced crystal quality would benefit the device performance.
URI: http://hdl.handle.net/11455/99237
文章連結: https://iopscience.iop.org/article/10.7567/JJAP.57.070301
Appears in Collections:材料科學與工程學系

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