Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/99239
標題: Growth and characterization of co-sputtered aluminum-gallium oxide thin films on sapphire substrates
作者: Chao-Chun Wang
Shuo-Huang Yuan
Sin-Liang Ou
Shiau-Yuan Huang
Ku-Yen Lin
Yi-An Chen
Po-Wen Hsiao
Dong-Sing Wuu
關鍵字: Aluminum gallium oxide
co-sputtering
Crystalline
DC power
Oxygen vacancy
Optoelectronic performance
摘要: Aluminum gallium oxide (AGO) films were deposited on c-plane sapphire by co-sputtering of Al and Ga2O3 targets at a substrate temperature of 600 °C, and then annealed at 900 °C to enhance their crystal quality. The effect of DC power (0, 5, 10, 30, 50 and 70 W) for Al target on the structural, optical and compositional characteristics of AGO films were investigated. After annealing, the films prepared at the DC powers of 0–50 W for Al target all exhibited the single crystalline structure with the (−201) plane family. The annealed film grown at the DC power of 10 W possessed the highest crystal quality than the others. With increasing the DC power from 0 to 70 W, the Al composition of AGO film increased from 0 to 6.08 at.%, while its bandgap increased from 4.89 to 5.19 eV. X-ray photoelectron spectroscopy studies indicate the intensity of Ga 2p3/2 peak (1117.9 eV) for the AGO film decreases, whereas the intensity of Al 2p peak (74.6 eV) increases with increasing the DC power. The metal-semiconductor-metal photodetector with the annealed AGO film deposited at the DC power of 10 W possesses the largest photocurrent of 5.7 × 10−9 A and the on/off current ratio (Ion/Ioff) of 1.5 × 104 (@2 V and 230 nm). The better optoelectronic performance of this device was attributed that the AGO film (DC power: 10 W) had a higher crystal quality, the O/(Al+Ga) ratio close to the optimum value of 1.5. Our results present the AGO films can be successfully prepared via sputtering technique, which are highly potential for deep-ultraviolet applications.
URI: http://hdl.handle.net/11455/99239
文章連結: https://www.sciencedirect.com/science/article/pii/S0925838818323910
Appears in Collections:材料科學與工程學系

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