Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/99242
標題: Surface evolution and effect of V/III ratio modulation on etch-pit-density improvement of thin AlN templates on nano-patterned sapphire substrates by metalorganic chemical vapor deposition
作者: Tzu-Yu Wang
Chi-Tsung Tasi
Ku-Yen Lin
Sin-Liang Ou
Ray-Hua Horng
Dong-Sing Wuu
武東星
關鍵字: AlN
V/III ratio modulation
Nano-patterned sapphire
Etch pit density
摘要: A low defect-density AlN template film using V/III ratio modulation and nano-patterned sapphire substrate (NPSS) was achieved by metalorganic chemical vapor deposition. In contrast to conventional high-quality AlN/NPSS obtained with high coalescence thickness (>6 μm) using high growth temperatures (≥1250 oC), this study reveals the high crystallinity of AlN with the lower thickness of 2.55 μm grown under a lower temperature of 1130 °C. It could effectively increase the heater lifetime and reduce the epi-wafer warpage. The growth of AlN/NPSS dominated by epitaxial lateral overgrowth achieves a dramatic reduction of full width at half maximum values along ) plane from 1640 to 714 arcsec, and lowest dislocation density of approximately 1 × 108 cm−2, as well as a ultra-low etching pit density of 2.3 × 105 cm−2. The crack-free AlN/NPSS with a compressive stress owing to the tensile stress was relaxed by the existence of some key-shaped holes upon the patterned region. Details of the surface evolution, mechanism and dislocation behavior of AlN/NPSS will be discussed and these results demonstrate this low-defect template technique of high potential for AlGaN-based device applications.
URI: http://hdl.handle.net/11455/99242
文章連結: https://www.sciencedirect.com/science/article/pii/S0169433218315836
Appears in Collections:材料科學與工程學系

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