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DateTitleAuthor(s)File
12005磷化鋁鎵銦發光二極體外部量子效率提昇之研究韓斌; Ray-Hua Horng; 洪瑞華; 姚良雨; Yao, Liang-Yu-
22008藉粗化視窗層提昇具高反射金屬基板之磷化鋁銦鎵發光二極體外部量子效率武東星; 富振華; 洪瑞華; 李賜龍; Li, Szu-Lung; 中興大學-
32007以二次晶圓接合技術研製具金屬反射鏡面之p-side up高亮度磷化鋁銦鎵發光二極體富振華; 戚務聖; 武東星; 洪瑞華; 饒益侖; Rao, Yi-Lun; 中興大學-
42007粗化視窗層對磷化鋁銦鎵發光二極體亮度影響之研究武東星; 郭政達; 洪瑞華; 張道淇; Chang, Tao-Chi; 中興大學-
52013具高散熱基板之P電極朝上薄膜型磷化鋁銦鎵發光二極體之研製洪瑞華; Ray-Hua Homg; 翁啟峰; Weng, Chi-Feng; 精密工程學系所-
62005以半導體式波長轉換膜研製白光發二極體與其特性研究洪瑞華; Ray-Hua Horng; 蘇英陽; Su, Ying-Yong-
72007應用於背光模組之固態白光LED之研製武東星; 戚務聖; 富振華; 洪瑞華; 陳又綸; Chen, You-Lun; 中興大學-
82011磷化鋁銦鎵(橙光)發光二極體取光效率提升之研究洪瑞華; 韓斌; 陳國峰; 武東星; 湯國樑; Tang, Kuo-Liang; 中興大學-
92006以二次晶圓接合技術研製具金屬反射鏡面之p-sideup高亮度磷化鋁銦鎵發光二極體洪瑞華; 饒益侖; Rao, Yi-Lun; 中興大學-
102007以不同晶粒製程改善磷化鋁銦鎵發光二極體出光效率之研究林明澤; Ming-Tzer Lin; 王昭鑫; Zhao-Xin Wang; 武東星; Dong-Sin Wu; 陳騰勳; Chen, Teng-Hsun; 中興大學-
112007磷化鋁銦鎵發光二極體磷化鎵窗口層表面缺陷之改善研究林明澤; Ming-Tzer Lin; 王昭鑫; Zhao-Xin Wang; 武東星; Dong-Sing Wu; 沈孟駿; Shen, Meng-Chun; 中興大學-
122008以磊晶膜轉移技術研製高效率磷化鋁銦鎵與氮化銦鎵發光二極體張翼; Yi Chang; 彭隆瀚; 張正陽; 張守進; 綦振瀛; 蘇炎坤; 李清庭; Lung-Han Peng; Jenq-Yang Chang; Shoou-Jinn Chang; Jen-Inn Chyi; Yan-Kuin Su; Ching-Ting Lee; 武東星; Dong-Sing Wuu; 黃少華; Huang, Shao-Hua; 中興大學-
132012以化學蝕刻剝離法研製薄膜型磷化鋁銦鎵發光二極體及其特性研究武東星; 陳峻利; Chen, Chun-Li; 材料科學與工程學系所-
142004具散熱鏡面基板高功率發光二極體之嶄新晶片結構之研發貢中元; Ray-Hua HORNG; 洪瑞華; 李佳恩; Lee, Chia-En-
152008Red-enhanced white light-emitting diodes using external AlGaInP epilayers with various aperture ratiosHorng, R.H.; 洪瑞華; Chen, Y.L.; Wuu, D.S.; 武東星-
162004High-power AlGaInP light-emitting diodes with patterned copper substrates by electroplatingHorng, R.H.; 洪瑞華; Lee, C.E.; Kung, C.Y.; Huang, S.H.; Wuu, D.S.; 武東星-
172008Phosphor-free white light from InGaN blue and green light-emitting diode chips covered with semiconductor-conversion AlGaInP epilayerHorng, R.H.; 洪瑞華; Han, P.; Wuu, D.S.; 武東星; 韓 斌-
182007High-efficiency 1-mm(2) AlGaInP LEDs sandwiched by ITO omni-directional reflector and current-spreading layerHsu, S.C.; 洪瑞華; Wuu, D.S.; Lee, C.Y.; Su, J.Y.; Horng, R.H.; 武東星-
192008High-performance AlGaInP/GaAs light-emitting diodes with a carbon-doped GaP/indium-tin oxide contact layerHsu, S.C.; 洪瑞華; Wuu, D.S.; Zheng, X.H.; Horng, R.H.; Su, J.Y.; 武東星-
202000Wafer-bonded AlGaInP/Au/AuBe/SiO2/Si light-emitting diodesHorng, R.H.; 洪瑞華; Wuu, D.S.; Wei, S.C.; Tseng, C.T.; Huang, M.F.; Chang, K.H.; Liu, P.H.; Lin, K.C.; 武東星-
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