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第 1 到 16 筆結果,共 16 筆。
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日期標題作者全文
12007Fabrication and characterization of InGaN-based green resonant-cavity LEDs using hydrogen ion-implantation techniquesHuang, S.Y.; 洪瑞華; Horng, R.H.; Kuo, H.C.; Wuu, D.S.; 武東星-
22011Transferring Thin Film GaN LED Epi-Structure to the Cu Substrate by Chemical Lift-Off TechnologyHorng, R.H.; 洪瑞華; Pan, C.T.; Tsai, T.Y.; Wuu, D.S.; 武東星-
32005Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substratesWuu, D.S.; 洪瑞華; Wang, W.K.; Shih, W.C.; Horng, R.H.; Lee, C.E.; Lin, W.Y.; Fang, J.S.; 武東星-
42006Efficiency improvement of GaN-based LEDs with ITO texturing window layers using natural lithographyHorng, R.H.; 洪瑞華; Huang, S.H.; Yang, C.C.; Wuu, D.S.; 武東星-
52008Power-enhanced ITO omni-directional reflective AlGaInP LEDs by two-dimensional wavelike surface texturingHsu, S.C.; 洪瑞華; Wuu, D.S.; Zheng, X.H.; Su, J.Y.; Kuo, M.F.; Han, P.; Horng, R.H.; 武東星; 韓 斌-
62011Enhanced Output Power of Near-Ultraviolet InGaN/AlGaN LEDs With Patterned Distributed Bragg ReflectorsLin, W.Y.; 洪瑞華; Wuu, D.S.; Huang, S.C.; Horng, R.H.; 武東星-
72009Thermal Management Design from Chip to Package for High Power InGaN/Sapphire LED ApplicationsHorng, R.H.; 洪瑞華; Chiang, C.C.; Tsai, Y.L.; Lin, C.P.; Kan, K.; Lin, H.I.; Wuu, D.S.; 武東星-
82008Enhanced Luminance Efficiency of Wafer-Bonded InGaN-GaN LEDs With Double-Side Textured Surfaces and Omnidirectional ReflectorsHorng, R.H.; 洪瑞華; Huang, S.H.; Hsieh, C.Y.; Zheng, X.H.; Wuu, D.S.; 武東星-
92007High-efficiency 1-mm(2) AlGaInP LEDs sandwiched by ITO omni-directional reflector and current-spreading layerHsu, S.C.; 洪瑞華; Wuu, D.S.; Lee, C.Y.; Su, J.Y.; Horng, R.H.; 武東星-
102009Novel Device Design for High-Power InGaN/Sapphire LEDs Using Copper Heat Spreader With ReflectorHorng, R.H.; 洪瑞華; Hsiao, H.Y.; Chiang, C.C.; Wuu, D.S.; Tsai, Y.L.; Lin, H.I.; 武東星-
112005Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substratesWang, W.K.; 洪瑞華; Wuu, D.S.; Lin, S.H.; Han, P.; Horng, R.H.; Hsu, T.C.; Huo, D.T.C.; Jou, M.J.; Yu, Y.H.; Lin, A.K.; 武東星; 韓 斌-
122006Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire templateWuu, D.S.; 洪瑞華; Wang, W.K.; Wen, K.S.; Huang, S.C.; Lin, S.H.; Huang, S.Y.; Lin, C.F.; Horng, R.H.; 武東星-
132009Defect reduction of laterally regrown GaN on GaN/patterned sapphire substratesWuu, D.S.; 洪瑞華; Wu, H.W.; Chen, S.T.; Tsai, T.Y.; Zheng, X.H.; Horng, R.H.; 武東星-
142007Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substratesHorng, R.H.; 洪瑞華; Wang, W.K.; Huang, S.C.; Huang, S.Y.; Lin, S.H.; Lin, C.F.; Wuu, D.S.; 武東星-
152010Influence of hydrogen implantation concentration on the characteristics of GaN-based resonant-cavity LEDsHuang, S.Y.; 洪瑞華; Horng, R.H.; Tsai, Y.J.; Lin, P.R.; Wang, W.K.; Feng, Z.C.; Wuu, D.S.; 武東星-
162009Improved output power of 400-nm InGaN/AlGaN LEDs using a novel surface roughening techniqueHuang, S.C.; 武東星; Wuu, D.S.; Wu, P.Y.; Lin, W.Y.; Tu, P.M.; Yeh, Y.C.; Hsu, C.P.; Chan, S.H.-
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