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Results 1-13 of 13 (Search time: 0.003 seconds).
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DateTitleAuthor(s)File
12011Fabrication of Flexible Amorphous-Si Thin-Film Solar Cells on a Parylene Template Using a Direct Separation ProcessLo, S.Y.; 洪瑞華; Wuu, D.S.; Chang, C.H.; Wang, C.C.; Lien, S.Y.; Horng, R.H.; 武東星-
22011Enhancing Light Output Power of InGaN-Based Light-Emitting Diodes with an Embedded Self-Textured Oxide Mask StructureLin, W.Y.; 洪瑞華; Shen, K.C.; Horng, R.H.; Wuu, D.S.; 武東星-
32011Transferring Thin Film GaN LED Epi-Structure to the Cu Substrate by Chemical Lift-Off TechnologyHorng, R.H.; 洪瑞華; Pan, C.T.; Tsai, T.Y.; Wuu, D.S.; 武東星-
42011Chemical-Mechanical Lift-Off Process for InGaN Epitaxial LayersLin, M.S.; 張守一; Lin, C.F.; Huang, W.C.; Wang, G.M.; Shieh, B.C.; Dai, J.J.; Chang, S.Y.; Wuu, D.S.; Liu, P.L.; Horng, R.H.; 洪瑞華; 武東星; 林佳鋒-
52011Enhanced Output Power of Near-Ultraviolet InGaN/AlGaN LEDs With Patterned Distributed Bragg ReflectorsLin, W.Y.; 洪瑞華; Wuu, D.S.; Huang, S.C.; Horng, R.H.; 武東星-
62011Permeation barrier coatings by inductively coupled plasma CVD on polycarbonate substrates for flexible electronic applicationsLay, E.; 洪瑞華; Wuu, D.S.; Lo, S.Y.; Horng, R.H.; Wei, H.F.; Jiang, L.Y.; Lee, H.U.; Chang, Y.Y.; 武東星-
72011Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performanceHuang, S.C.; 洪瑞華; Shen, K.C.; Wuu, D.S.; Tu, P.M.; Kuo, H.C.; Tu, C.C.; Horng, R.H.; 武東星-
82011Demonstration of InGaN Light-Emitting Diodes by Incorporating a Self-Textured Oxide Mask StructureLin, W.Y.; 洪瑞華; Wuu, D.S.; Huang, S.C.; Lo, S.Y.; Liu, C.M.; Horng, R.H.; 武東星-
92011Light Extraction Investigation for Thin-Film GaN Light-Emitting Diodes With Imbedded ElectrodesHorng, R.H.; 洪瑞華; Lu, Y.A.; Wuu, D.S.; 武東星-
102011Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar CellsLin, Y.S.; 武東星; Lien, S.Y.; Wang, C.C.; Hsu, C.H.; Yang, C.H.; Nautiyal, A.; Wuu, D.S.; Tsai, P.C.; Lee, S.J.-
112011Power Enhancement of 410-nm InGaN-Based Light-Emitting Diodes on Selectively Etched GaN/Sapphire Templates洪瑞華; Tsai, T.Y.; 武東星; Wuu, D.S.; Hung, M.T.; Tu, J.H.; Huang, S.C.; Horng, R.H.; Chiang, W.Y.; Tu, L.W.-
122011Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrierTu, P.M.; 武東星; Chang, C.Y.; Huang, S.C.; Chiu, C.H.; Chang, J.R.; Chang, W.T.; Wuu, D.S.; Zan, H.W.; Lin, C.C.; Kuo, H.C.; Hsu, C.P.-
132011Synergy between corrosion and wear of electrodeposited Ni-P coating in NaCl solutionLee, H.B.; 武東星; Wuu, D.S.; Lee, C.V.; Lin, C.S.-
Results 1-13 of 13 (Search time: 0.003 seconds).
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