Browsing by Author Chang, Shu-Tong

Showing results 1 to 9 of 9
Issue DateTitleAuthor(s)Text
-A Stress Response Model for Hole Mobility in the Inversion Layer of Ge MOSFETsChen, Kuan-Ting; Lee, Chia-Feng; He, Ren-Yu; 張書通; Chang, Shu-Tong
-Detection of Charged Proteins with a Bio-Sensor Device Using a Semiconductor-on-Insulator StructureHe, Ren-Yu; Chen, Kuan-Ting; Lee, Chia-Feng; 張書通; Chang, Shu-Tong
-Electron Mobility Calculation for Monolayer Transition Metal Dichalcogenide Alloy Using Tight-Binding Band StructureChen, Kuan-Ting; He, Ren-Yu; Lee, Chia-Feng; Wu, Ming-Ting; 張書通; Chang, Shu-Tong
-Impact of Strain Engineering on Nanoscale Strained In GaAs MOSFET DevicesLee, Chang-Chun; Chang, Shu-Tong; P.-H.Sun; C.-X.Huang-
-Negative-Capacitance Fin Field-Effect Transistor Beyond the 7-nm NodeChen, Kuan-Ting; Qiu, Yu-Yan; Tang, Ming; Lee, Chia-Feng; Dai, Yi-Lu; Lee, Min-Hung; Chang, Shu-Tong; 張書通
-A poly(styrene-co-methyl methacrylate)/room-temperature sputtered hafnium oxide bi-layer dielectrics as gate insulator for a low voltage organic thin-film transistorsHuang, Ting-Hsiang; Liu, Kou-Chen; Pei, Zingway; Lin, Wen-Kai; Chang, Shu-Tong-
-Subband Structure and Effective Mass in the Inversion Layer of a Strain Si-Based Alloy P-Type MOSFETChen, Kuan-Ting; Fan, Jun Wei; Chang, Shu-Tong; Lin, Chung-Yi-
-Subband structure and effective mass of relaxed and strained Ge (110) PMOSFETsHsieh, Bing-Fong; Chang, Shu-Tong-
-Technology computer-aided design simulation study for a strained InGaAs channel n-type metal-oxide-semiconductor field-effect transistor with a high-k dielectric oxide layer and a metal gate electrodeChang, Shu-Tong; Lee, Chang-Chun; P.-H.Sun