Browsing by Author Fan, J.W.


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Showing results 2 to 4 of 4 < previous 
Issue DateTitleAuthor(s)Text
-Hole effective masses of p-type metal-oxide-semiconductor inversion layer in strained Si1-xGex alloys channel on (110) and (111) Si substratesChang, S.T.; Fan, J.W.; Lin, C.Y.; Cho, T.C.; Huang, M.-
-Impact of source/drain Si1-yCy stressors on silicon-on-insulator N-type metal-oxide-semiconductor field-effect transistorsLin, C.Y.; 張書通; Chang, S.T.; Huang, J.; Wang, W.C.; Fan, J.W.-
-Impact of stress engineering on the electron mobility and the ballistic current for strained SiNMOSFETsChang, S.T.; 張書通; Liao, S.H.; Wang, W.C.; Lin, C.Y.; Fan, J.W.-