Browsing by Author Kung, C.Y.


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Showing results 8 to 27 of 37 < previous   next >
Issue DateTitleAuthor(s)Text
-Fabrication of an ultrathin silicon wafer with a honeycomb structure by the thermal-stress-induced pattern transfer (TIPT) methodWang, T.Y.; Chen, C.H.; Du, C.H.; Kung, C.Y.-
-The Ferroelectric and Magnetic Properties of Sol-Gel-Derived (Bi0.85Eu0.15FeO3/Bi3.2Y0.8Ti3O12) Bilayer Thin FilmsChen, H.Z.; Kao, M.C.; Young, S.L.; Lin, C.C.; Kung, C.Y.; Chuang, B.N.; Jiang, W.W.; Song, J.S.-
-High photo-to-dark-current ratio in SiGe/Si schottky-barrier photodetectors by using an a-Si : H cap layerHwang, J.D.; 貢中元; Chen, Y.H.; Kung, C.Y.; Liu, J.C.-
-High-power AlGaInP light-emitting diodes with patterned copper substrates by electroplatingHorng, R.H.; 洪瑞華; Lee, C.E.; Kung, C.Y.; Huang, S.H.; Wuu, D.S.; 武東星-
-High-power GaN light-emitting diodes with patterned copper substrates by electroplatingHorng, R.H.; 洪瑞華; Lee, C.E.; Hsu, S.C.; Huang, S.H.; Wu, C.C.; Kung, C.Y.; Wuu, D.S.; 武東星-
-Improving the performance of SiGe metal-semiconductor-metal photodetectors by using an amorphous silicon passivation layerChen, Y.H.; 貢中元; Hwang, J.D.; Kung, C.Y.; Chen, R.S.; Wei, C.S.; Wu, C.K.; Liu, J.C.-
-Influences of temperature ramping rate on GaN buffer layers and subsequent GaN overlayers grown by metalorganic chemical vapor depositionWuu, D.S.; 洪瑞華; Horng, R.H.; Tseng, W.H.; Lin, W.T.; Kung, C.Y.; 武東星-
-Investigation of Electrical Properties of Thermally Annealed SiGe Metal-Oxide-Semiconductor Capacitors Prepared by Liquid-Phase Deposition of Silicon DioxideKung, C.Y.; 貢中元; Hwang, J.D.; Chen, Y.H.; Chen, P.S.; Chan, H.J.-
-Ion-implantation treatment (Ba, Sr)TiO3 thin filmsHorng, R.H.; 洪瑞華; Wuu, D.S.; Kung, C.Y.; Lin, C.C.; Leu, C.C.; Haung, T.Y.; Sze, S.M.; 武東星-
-Ion-implanted treatment of (Ba, Sr)TiO3 films for DRAM applicationsHorng, R.H.; 洪瑞華; Wuu, D.S.; Kung, C.Y.; Lin, J.C.; Leu, C.C.; Huang, T.Y.; Sze, S.M.; 武東星-
-Liquid phase deposition silicon dioxide for surface passivation in SiGe metal-semiconductor-metal photodetectorsHwang, J.D.; 貢中元; Kung, C.Y.; Chen, Y.H.; Wei, C.S.; Chen, P.S.-
-Low-temperature oxidation of SiGe by liquid-phase depositionChen, Y.H.; 貢中元; Kung, C.Y.; Hwang, J.D.; Lin, H.Y.; Chan, H.J.; Chen, P.S.-
-Microstructure and Optical Properties of Tantalum Modified TiO2 Thin Films Prepared by the Sol-Gel ProcessKao, M.C.; Chen, H.Z.; Young, S.L.; Kung, C.Y.; Lin, C.C.; Hong, Z.Y.-
-Multiferroic Properties and Leakage Current Mechanisms of Bi0.9Eu0.1FeO3 Thin FilmsKao, M.C.; Chen, H.Z.; Young, S.L.; Chiang, J.L.; Lin, C.C.; Kung, C.Y.; Lin, C.H.; Liao, C.C.-
-Optimization of field emission properties of carbon nanotubes by Taguchi methodTing, J.H.; Chang, C.C.; Chen, S.L.; Lu, D.S.; Kung, C.Y.; Huang, F.Y.-
-Parallelizable simulation of material effects of chemical shrink process of nanolithographyLi, T.L.; Ting, J.H.; Kung, C.Y.-
-Photoluminescence Properties of the Zn1-x Y (x) O Tubes Prepared by Polycarbonate TemplatesLin, C.C.; Young, S.L.; Kung, C.Y.; Jhang, M.C.; Kao, M.C.; Chen, H.Z.; Shih, Y.T.-
-A poly-Si thin-film transistor with the in situ vacuum gaps under the T-shaped-gated electrodeLiao, T.C.; Wu, C.Y.; Chien, F.T.; Tsai, C.C.; Chen, H.H.; Kung, C.Y.; Cheng, H.C.-
-Preparation and properties of sputtered nitrogen-doped cobalt silicide filmTing, J.H.; Shiau, S.H.; Chen, Y.J.; Pan, F.M.; Wong, H.; Pu, G.M.; Kung, C.Y.-
-Rapid Thermal Annealing of ZnO Nanocrystalline Films for Dye-Sensitized Solar CellsKao, M.C.; 貢中元; Chen, H.Z.; Young, S.L.; Kung, C.Y.; Lin, C.C.; Lai, J.Z.-