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| Issue Date | Title | Author(s) | Text |
| - | 3D TCAD simulations of strained Si CMOS devices with silicon-based alloy stressors and stressed CESL | Wang, W.C.; 張書通; Chang, S.T.; Huang, J.; Kuang, S.J. | - |
| - | A Stress Response Model for Hole Mobility in the Inversion Layer of Ge MOSFETs | Chen, Kuan-Ting; Lee, Chia-Feng; He, Ren-Yu; 張書通; Chang, Shu-Tong | |
| - | Abnormal hole mobility of biaxial strained Si | Liao, M.H.; 張書通; Chang, S.T.; Lee, M.H.; Maikap, S.; Liu, C.W. | - |
| - | Adhesion investigation of low-k films system using 4-point bending test | Lee, C.C.; 張書通; Huang, J.; Chang, S.T.; Wang, W.C. | - |
| - | Analysis and Modeling of Nano-Crystalline Silicon TFTs on Flexible Substrate with Mechanical Strain | Lee, M.H.; 張書通; Chang, S.T.; Hsieh, B.F.; Huang, J.J.; Lee, C.C. | - |
| - | Analysis of dispersion relation for spoof surface plasmons using modal expansion method | 陳柏伸; Chen, Po-Sheng | - |
| - | Applications of Novel Semiconductor Alloy Materials on Advanced Nanoscale Cmos Devices | 張書通 | - |
| - | Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering | Chang, S.T.; 張書通; Liao, M.H.; Lee, C.C.; Huang, J.K.; Wang, W.C.; Hsieh, B.F. | - |
| - | Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (111) substrate | Maikap, S.; 張書通; Lee, M.H.; Chang, S.T.; Liu, C.W. | - |
| - | Compact conduction band model for transition-metal dichalcogenide alloys | Kuan-Ting Chen; Ren-Yu He; Chia-Feng Lee; Ming-Ting Wu; Shu-Tong Chang; 張書通 | |
| - | Comprehensive study of the Raman shifts of strained silicon and germanium | Peng, C.Y.; 張書通; Huang, C.F.; Fu, Y.C.; Yang, Y.H.; Lai, C.Y.; Chang, S.T.; Liu, C.W. | - |
| - | Detection of Charged Proteins with a Bio-Sensor Device Using a Semiconductor-on-Insulator Structure | He, Ren-Yu; Chen, Kuan-Ting; Lee, Chia-Feng; 張書通; Chang, Shu-Tong | |
| - | Driving Current Enhancement of Strained Ge (110) p-Type Tunnel FETs and Anisotropic Effect | Lee, M.H.; 張書通; Chang, S.T.; Wu, T.H.; Tseng, W.N. | - |
| - | Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing | Chiu, C.J.; 張書通; Pei, Z.W.; Chang, S.T.; Chang, S.P.; Chang, S.J.; 裴靜偉 | - |
| - | Effective mass and subband structure of strained Si in a PMOS inversion layer with external stress | Chang, S.T.; 張書通; Huang, J.; Tang, M.; Lin, C.Y. | - |
| - | Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal-Oxide-Silicon Capacitors | Peng, C.Y.; 張書通; Yang, Y.J.; Fu, Y.C.; Huang, C.F.; Chang, S.T.; Liu, C.W. | - |
| - | Electrical Characteristics of SiGe-base Bipolar Transistors on Thin-film SOI Substrates | Liao, S.H.; 張書通; Chang, S.T. | - |
| - | Electron and hole mobilities in orthorhombically strained silicon | Chang, S.T.; 張書通 | - |
| - | Electron Mobility Calculation for Monolayer Transition Metal Dichalcogenide Alloy Using Tight-Binding Band Structure | Chen, Kuan-Ting; He, Ren-Yu; Lee, Chia-Feng; Wu, Ming-Ting; 張書通; Chang, Shu-Tong | |
| - | Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors | Yang, Y.J.; 張書通; Ho, W.S.; Huang, C.F.; Chang, S.T.; Liu, C.W. | - |
