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| Issue Date | Title | Author(s) | Text |
| - | 3D TCAD simulations of strained Si CMOS devices with silicon-based alloy stressors and stressed CESL | Wang, W.C.; 張書通; Chang, S.T.; Huang, J.; Kuang, S.J. | - |
| - | Abnormal hole mobility of biaxial strained Si | Liao, M.H.; 張書通; Chang, S.T.; Lee, M.H.; Maikap, S.; Liu, C.W. | - |
| - | Adhesion investigation of low-k films system using 4-point bending test | Lee, C.C.; 張書通; Huang, J.; Chang, S.T.; Wang, W.C. | - |
| - | Analysis and Modeling of Nano-Crystalline Silicon TFTs on Flexible Substrate with Mechanical Strain | Lee, M.H.; 張書通; Chang, S.T.; Hsieh, B.F.; Huang, J.J.; Lee, C.C. | - |
| - | Antrocamphin A, an Anti-inflammatory Principal from the Fruiting Body of Taiwanofungus camphoratus, and Its Mechanisms | Hsieh, Y.H.; 蕭介夫; Chu, F.H.; Wang, Y.S.; Chien, S.C.; Chang, S.T.; Shaw, J.F.; Chen, C.Y.; Hsiao, W.W.; Kuo, Y.H.; Wang, S.Y.; 王升陽 | - |
| - | Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering | Chang, S.T.; 張書通; Liao, M.H.; Lee, C.C.; Huang, J.K.; Wang, W.C.; Hsieh, B.F. | - |
| - | Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (111) substrate | Maikap, S.; 張書通; Lee, M.H.; Chang, S.T.; Liu, C.W. | - |
| - | Comprehensive study of the Raman shifts of strained silicon and germanium | Peng, C.Y.; 張書通; Huang, C.F.; Fu, Y.C.; Yang, Y.H.; Lai, C.Y.; Chang, S.T.; Liu, C.W. | - |
| - | Driving Current Enhancement of Strained Ge (110) p-Type Tunnel FETs and Anisotropic Effect | Lee, M.H.; 張書通; Chang, S.T.; Wu, T.H.; Tseng, W.N. | - |
| - | Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing | Chiu, C.J.; 張書通; Pei, Z.W.; Chang, S.T.; Chang, S.P.; Chang, S.J.; 裴靜偉 | - |
| - | Effective mass and subband structure of strained Si in a PMOS inversion layer with external stress | Chang, S.T.; 張書通; Huang, J.; Tang, M.; Lin, C.Y. | - |
| - | Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal-Oxide-Silicon Capacitors | Peng, C.Y.; 張書通; Yang, Y.J.; Fu, Y.C.; Huang, C.F.; Chang, S.T.; Liu, C.W. | - |
| - | Electrical Characteristics of SiGe-base Bipolar Transistors on Thin-film SOI Substrates | Liao, S.H.; 張書通; Chang, S.T. | - |
| - | Electron and hole mobilities in orthorhombically strained silicon | Chang, S.T.; 張書通 | - |
| - | Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors | Yang, Y.J.; 張書通; Ho, W.S.; Huang, C.F.; Chang, S.T.; Liu, C.W. | - |
| - | Electron transport model for strained silicon-carbon alloy | Chang, S.T.; 張書通; Lin, C.Y. | - |
| - | Energy band structure of strained Si1-xCx alloys on Si (001) substrate | Chang, S.T.; 張書通; Lin, C.Y.; Liu, C.W. | - |
| - | Exploring the effect of width on performance enhancement in NMOSFETs with a silicon-carbon alloy stressor and a tensile stress silicon nitride liner | Chang, S.T.; 張書通; Wang, W.C.; Huang, J.; Liao, S.H.; Lin, C.Y. | - |
| - | The gap state density of micro/nano-crystalline silicon active layer on flexible substrate | Lee, M.H.; 張書通; Chang, S.T.; Lee, C.C.; Huang, J.J.; Hu, G.K.; Huang, Y.S. | - |
| - | High Ge Content of SiGe Channel pMOSFETs on Si (110) Surfaces | Lee, M.H.; 張書通; Chang, S.T.; Maikap, S.; Peng, C.Y.; Lee, C.H. | - |
