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| Issue Date | Title | Author(s) | Text |
| - | Acoustoeletric transformation chip for ribbon microphone | Horng, Ray-Hua; Chang, Chao-Chih; Ke, Ming-Li; Chen, Guan-Wei; Tsai, Yao-Cheng | |
| - | Diamond-Added-Copper Heat Spreader for UV LED Applications | Horng, Ray-Hua; Lin, Re-Ching; Hu, Hung-Lieh; Peng, Kun-Cheng; Hsu, Chen-Peng | - |
| - | Direct growth of large grain polycrystalline silicon films on aluminum-induced crystallization seed layer using hot-wire chemical vapor deposition | Wu, Bing-Rui; Lo, Shih-Yung; Wuu, Dong-Sing; Ou, Sin-Liang; Mao, Hsin-Yuan; Wang, Jui-Hao; Horng, Ray-Hua | - |
| - | Effect of Crystalline Quality on Photovoltaic Performance for In0.17Ga0.83As Solar Cell Using X-Ray Reciprocal Space Mapping | Tseng, Ming-Chun; Horng, Ray-Hua; Wuu, Dong-Sing; Yang, Min-De | - |
| - | Enhanced light output power of thin film GaN-based high voltage light-emitting diodes | Tien, Ching-Ho; Chen, Ken-Yen; Hsu, Chen-Peng; Horng, Ray-Hua | - |
| - | Epitaxial structure having low defect density | Wuu, Dong-Sing; Horng, Ray-Hua; Chen, Shih-Ting; Tsai, Tshung-Han; Wu, Hsueh-Wei | |
| - | GaN Epilayer Grown on Ga2O3 Sacrificial Layer for Chemical Lift-Off Application | Tsai, Tsung-Yen; Horng, Ray-Hua; Wuu, Dong-Sing; Ou, Sin-Liang; Hung, Ming-Tsung; Hsueh, Hsu-Hung | - |
| - | Growth and Characterization of p-InGaN/i-InGaN/n-GaN Double-Heterojunction Solar Cells on Patterned Sapphire Substrates | Chu, Mu-Tao; Liao, Wen-Yih; Horng, Ray-Hua; Tsai, Tsung-Yen; Wu, Tsai-Bau; Liu, Shu-Ping; Wu, Ming-Hsien; Lin, Ray-Ming | - |
| - | High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target | Shen, Kun-Ching; Wang, Tzu-Yu; Wuu, Dong-Sing; Horng, Ray-Hua | - |
| - | High performance GaN-based flip-chip LEDs with different electrode patterns | Horng, Ray-Hua; Chuang, Shih-Hao; Tien, Ching-Ho; Lin, Sin-Cyuan; Wuu, Dong-Sing | - |
| - | High thermal stability of high indium content InGaN films grown by pulsed laser deposition | Shen, Kun-Ching; Wang, Tzu-Yu; Wuu, Dong-Sing; Horng, Ray-Hua | - |
| - | Hot-wire chemical vapor deposition and characterization of p-type nanocrystalline Si films for thin film photovoltaic applications | Mao, Hsin-Yuan; Lo, Shih-Yung; Wuu, Dong-Sing; Wu, Bing-Rui; Ou, Sin-Liang; Hsieh, Hsin-Yu; Horng, Ray-Hua | - |
| - | Hot-wire chemical vapor deposition and characterization of polycrystalline silicon thin films using a two-step growth method | Mao, Hsin-Yuan; Wuu, Dong-Sing; Wu, Bing-Rui; Lo, Shih-Yung; Horng, Ray-Hua | - |
| - | Improved GaN-on-Si epitaxial quality by incorporating various SixNy interlayer structures | Wang, Tzu-Yu; Ou, Sin-Liang; Horng, Ray-Hua; Wuu, Dong-Sing | - |
| - | Improved Performance of Near-Ultraviolet Light Emitting Diodes on Selectively Etched GaN Templates | Tsai, Tsung-Yen; Wuu, Dong-Sing; Tu, Jen-Hung; Hung, Ming-Tsung; Huang, Shih-Cheng; Huang, Shih-Yung; Horng, Ray-Hua | - |
| - | Improvement in separation rate of epitaxial lift-off by hydrophilic solvent for GaAs solar cell applications | Wu, Fan-Lei; Ou, Sin-Liang; Horng, Ray-Hua; Kao, Yu-Cheng | - |
| - | Improvement of thermal management of high-power GaN-based light-emitting diodes | Liou, Bo-Hung; Chen, Chih-Ming; Horng, Ray-Hua; Chiang, Yi-Chen; Wuu, Dong-Sing | - |
| - | Method for forming a light emitting diode | Horng, Ray-Hua; Wuu, Dong-Sing | |
| - | MOCVD Growth of GaN on Sapphire Using a Ga2O3 Interlayer | Tsai, Tsung-Yen; Ou, Sin-Liang; Hung, Ming-Tsung; Wuu, Dong-Sing; Horng, Ray-Hua | - |
| - | P-side-up thin-film AlGaInP-based light emitting diodes with direct ohmic contact of an ITO layer with a GaP window layer | Tseng, Ming-Chun; Chen, Chi-Lu; Lai, Nan-Kai; Chen, Shih-I; Hsu, Tzu-Chieh; Peng, Yu-Ren; Horng, Ray-Hua | - |
