Browsing by Author Hsieh, B.F.

Showing results 1 to 9 of 9
Issue DateTitleAuthor(s)Text
-Analysis and Modeling of Nano-Crystalline Silicon TFTs on Flexible Substrate with Mechanical StrainLee, M.H.; 張書通; Chang, S.T.; Hsieh, B.F.; Huang, J.J.; Lee, C.C.-
-Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineeringChang, S.T.; 張書通; Liao, M.H.; Lee, C.C.; Huang, J.K.; Wang, W.C.; Hsieh, B.F.-
-Nickel Schottky junction on epi-Ge for strained Ge metal-oxide-semiconductor field-effect transistors source/drain engineeringLee, M.H.; Hsieh, B.F.; Chang, S.T.; Lee, S.W.-
-p-Type Tunneling Field-Effect Transistors on (100)- and (110)- Oriented Si SubstratesLee, M.H.; 張書通; Hsieh, B.F.; Wu, T.H.; Chang, S.T.-
-A simulation study of thin film tandem solar cells with a nanoplate absorber bottom cellChang, S.T.; Hsieh, B.F.; Liu, Y.C.-
-Strain engineering of nanoscale Si MOS devicesHuang, J.; 張書通; Chang, S.T.; Hsieh, B.F.; Liao, M.H.; Wang, W.C.; Lee, C.C.-
-Studying the impact of carbon on device performance for strained-Si MOSFETsLee, M.H.; 張書通; Chang, S.T.; Peng, C.Y.; Hsieh, B.F.; Maikap, S.; Liao, S.H.-
-Subband structure and effective mass of relaxed and strained Ge (110) PMOSFETsHsieh, B.F.; 張書通; Chang, S.T.-
-TCAD studies of novel nanoplate amorphous silicon alloy thin-film solar cellsChang, S.T.; 張書通; Hsieh, B.F.-