| Issue Date | Title | Author(s) | Text |
| - | Characteristics and interactions of threading dislocations in GaN films grown on (0001) sapphire substrates with or without short-period superlattice insertion | 龔志榮; Wang, W.L.; Gong, J.R.; Wang, C.L.; Liao, W.T.; He, J.L.; Chi, Y.C.; Shi, J.B. | - |
| - | Comparison of the performance of InGaN/AlGaN MQW LEDs grown on c-plane and a-plane sapphire substrates | Liao, W.T.; 龔志榮; Gong, J.R.; Wang, C.L.; Wang, W.L.; Tsuei, C.C.; Lee, C.Y.; Chen, K.C.; Ho, J.R.; Luo, R.C. | - |
| - | Deposition of AlGaN films on (111)Si substrates and optimization of GaN growth on Si using intermediate-temperature AlGaN buffer layers | 龔志榮; Wang, C.L.; Gong, J.R.; Liao, W.T.; Lin, C.K.; Lin, T.Y. | - |
| - | Growth of AlGaN and GaN films on (1120) Al2O3 substrates and the influence of V/III ratio on the properties of GaN films | Liao, W.T.; 龔志榮; Gong, J.R.; Lin, S.W.; Wang, C.L.; Lin, T.Y.; Chen, K.C.; Cheng, Y.C.; Lin, W.J. | - |
| - | Improvement in the characteristics of GaN-based light-emitting diodes by inserting AlGaN-GaN short-period superlattices in GaN underlayers | 龔志榮; Wang, C.L.; Gong, J.R.; Yeh, M.F.; Wu, B.J.; Liao, W.T.; Lin, T.Y.; Lin, C.K. | - |
| - | Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes | 龔志榮; Wang, C.L.; Tsai, M.C.; Gong, J.R.; Liao, W.T.; Lin, P.Y.; Yen, K.Y.; Chang, C.C.; Lin, H.Y.; Hwang, S.K. | - |
| - | Influence of the trench depths of grooved GaN templates on the characteristics of overgrown AlGaN films | Wang, C.L.; 龔志榮; Wang, W.L.; Liao, W.T.; Gong, J.R.; Lin, C.K.; Lin, T.Y. | - |
| - | On the characteristics of AlGaN films grown on (111) and (001)Si substrates | 龔志榮; Wang, C.L.; Gong, J.R.; Liao, W.T.; Wang, W.L.; Lin, T.Y.; Lin, C.K. | - |
| - | The properties of AlGaN films and AlGaN/GaN heterostructures grown on (11(2)over-bar0) sapphire substrates | Liao, W.T.; 林寬鋸; Gong, J.R.; Lin, S.W.; Wang, C.L.; Chen, K.C.; Shi, J.B.; Chang, S.Y.; Lin, K.J.; 龔志榮 | - |
