Browsing by Author Ray-Hua Horng


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Issue DateTitleAuthor(s)Text
-AlGaN/GaN MOS-HEMTs with Corona-Discharge Plasma Treatment袁碩璜; Shuo-Huang Yuan; Feng-Yeh Chang; Dong-Sing Wuu; Ray-Hua Horng
-Characteristics and UV detectors applications of Co-doped ZnO nanostructures grown by PLDTzu-Ching Hsu; 徐子清
-Design and Fabrication of In-Situ Monitoring System for Epitaxial Growth ApplicationsShun-Ji Shih; 石舜吉
-The Diagram of Feedback Regimes Revisited-
-Effects of CF4 Plasma Treatment on Characteristics of Enhancement Mode AlGaN/GaN High Electron Mobility TransistorsChih-Tung Yeh; 葉治東
-Effects of crystallinity and point defects on optoelectronic applications of β-Ga2O3 epilayers
-Effects of crystallinity and point defects on optoelectronic applications of β-Ga2O3 epilayers
-Effects of hollow nanosphere on characteristics of p-side up thin film AlGaInP light emitting diodesWen-Ching Cheng; 鄭文清
-An Efficient Metal-Core Printed Circuit Board Witha Copper-Filled Through (Blind) Holefor Light-Emitting Diodes-
-Fabrication of GaN thin-film UV-LEDs using different high thermal conductive substratesGuan-Cheng Chen; 陳冠丞
-Fabrication of novel white flip-chip light emitting diodes by the combination of phosphor template and the substrate transferring techniqueKuo-Wei Ho; 何國瑋
-GaN light emitting diodes with wing-type imbedded contacts
-GaN light emitting diodes with wing-type imbedded contacts
-GaN-based LEDs Fabricated on Cone-Shaped Patterned Sapphire Substrates with Modified Top-TipHsu-Hung Hsueh; Sin-Liang Ou; Dong-Sing Wuu; Ray-Hua Horng
-High performance of Ga-doped ZnO transparentconductive layers using MOCVD for GaN LEDapplications
-High performance of Ga-doped ZnO transparentconductive layers using MOCVD for GaN LEDapplications
-Improved performance of flip-chip white light emitting diodes with conformal phosphor layer prepared by model conformal coating techniqueHsin-Yi Chiang; 江欣怡
-Investigation of nano-silver particles effects on the performance of near UV-LEDsChiun-Hao Lin; 林群皓
-Optoelectronic performance of GaN-based LEDs grown on flat-top pyramid patterned sapphire substratesYu-Che Peng; 彭宥喆
-Polarization effect on optoelectronic properties of flexible gallium indium nitride light-emitting diodesKeng-Chen Liu; 劉耕辰