| Issue Date | Title | Author(s) | Text |
| - | Characteristics of flip-chip InGaN-based light-emitting diodes on patterned sapphire substrates | Wang, W.K.; 洪瑞華; Wuu, D.S.; Lin, S.H.; Huang, S.Y.; Han, P.; Horng, R.H.; 武東星; 韓 斌 | - |
| - | Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template | Wuu, D.S.; 洪瑞華; Wang, W.K.; Wen, K.S.; Huang, S.C.; Lin, S.H.; Huang, S.Y.; Lin, C.F.; Horng, R.H.; 武東星 | - |
| - | Effect of resonant cavity in wafer-bonded green InGaN LED with dielectric and silver mirrors | Horng, R.H.; 洪瑞華; Wang, W.K.; Huang, S.Y.; Wuu, D.S.; 武東星 | - |
| - | Effects of transparent conductive layers on characteristics of InGaN-based green resonant-cavity light-emitting diodes | Huang, S.Y.; 洪瑞華; Horng, R.H.; Wuu, D.S.; Wang, W.K.; Yu, T.E.; Lin, P.R.; Juang, F.S.; 武東星 | - |
| - | Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates | Wang, W.K.; 洪瑞華; Wuu, D.S.; Lin, S.H.; Han, P.; Horng, R.H.; Hsu, T.C.; Huo, D.T.C.; Jou, M.J.; Yu, Y.H.; Lin, A.K.; 武東星; 韓 斌 | - |
| - | Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates | Wuu, D.S.; 洪瑞華; Wang, W.K.; Shih, W.C.; Horng, R.H.; Lee, C.E.; Lin, W.Y.; Fang, J.S.; 武東星 | - |
| - | Fabrication and efficiency improvement of micropillar InGaN/Cu light-emitting diodes with vertical electrodes | Wang, W.K.; 洪瑞華; Huang, S.Y.; Huang, S.H.; Wen, K.S.; Wuu, D.S.; Horng, R.H.; 武東星 | - |
| - | Fabrication of pyramidal patterned sapphire substrates for high-efficiency InGaN-based light emitting diodes | Wuu, D.S.; 洪瑞華; Wang, W.K.; Wen, K.S.; Huang, S.C.; Lin, S.H.; Horng, R.H.; Yu, Y.S.; Pan, M.H.; 武東星 | - |
| - | GaN-based green resonant cavity light-emitting diodes | Huang, S.Y.; 洪瑞華; Horng, R.H.; Wang, W.K.; Wuu, D.S.; 武東星 | - |
| - | Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates | Horng, R.H.; 洪瑞華; Wang, W.K.; Huang, S.C.; Huang, S.Y.; Lin, S.H.; Lin, C.F.; Wuu, D.S.; 武東星 | - |
| - | Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates | Wang, W.K.; 洪瑞華; Wuu, D.S.; Lin, S.H.; Huang, S.Y.; Wen, K.S.; Horng, R.H.; 武東星 | - |
| - | High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques | Lin, W.Y.; 洪瑞華; Wuu, D.S.; Pan, K.F.; Huang, S.H.; Lee, C.E.; Wang, W.K.; Hsu, S.C.; Su, Y.Y.; Huang, S.Y.; Horng, R.H.; 武東星 | - |
| - | Influence of hydrogen implantation concentration on the characteristics of GaN-based resonant-cavity LEDs | Huang, S.Y.; 洪瑞華; Horng, R.H.; Tsai, Y.J.; Lin, P.R.; Wang, W.K.; Feng, Z.C.; Wuu, D.S.; 武東星 | - |
| - | InGaN-Based Light-Emitting Diodes with a Cone-Shaped Sidewall Structure Fabricated Through a Crystallographic Wet Etching Process | Lin, C.F.; 洪瑞華; Lin, C.M.; Yang, C.C.; Wang, W.K.; Huang, Y.C.; Chen, J.A.; Horng, R.H.; 林佳鋒 | - |
| - | Near-ultraviolet InGaN/GaN light-emitting diodes grown on patterned sapphire substrates | Wang, W.K.; 洪瑞華; Wuu, D.S.; Shih, W.C.; Fang, J.S.; Lee, C.E.; Lin, W.Y.; Han, P.; Horng, R.H.; Hsu, T.C.; Huo, T.C.; Jou, M.J.; Lin, A.; Yu, Y.H.; 武東星; 韓 斌 | - |
