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| Issue Date | Title | Author(s) | Text |
| - | Analysis of the Thickness Effect of Undoped Electron-Blocking Layer in Ultraviolet LEDs | Lin, Wen-Yu; Wang, Tzu-Yu; Liang, Jia-Hao; Ou, Sin-Liang; Wuu, Dong-Sing | - |
| - | Direct growth of large grain polycrystalline silicon films on aluminum-induced crystallization seed layer using hot-wire chemical vapor deposition | Wu, Bing-Rui; Lo, Shih-Yung; Wuu, Dong-Sing; Ou, Sin-Liang; Mao, Hsin-Yuan; Wang, Jui-Hao; Horng, Ray-Hua | - |
| - | Effect of Crystalline Quality on Photovoltaic Performance for In0.17Ga0.83As Solar Cell Using X-Ray Reciprocal Space Mapping | Tseng, Ming-Chun; Horng, Ray-Hua; Wuu, Dong-Sing; Yang, Min-De | - |
| - | Effect of Plasma Radical Composition in Intrinsic a-Si:H on Performances of Heterojunction Solar Cells | Cho, Yun-Shao; Hsu, Chia-Hsun; Lien, Shui-Yang; Wuu, Dong-Sing; Han, Pin; Chen, Chia-Fu; Wang, Jui-Hao | - |
| - | Epitaxial structure having low defect density | Wuu, Dong-Sing; Horng, Ray-Hua; Chen, Shih-Ting; Tsai, Tshung-Han; Wu, Hsueh-Wei | |
| - | GaN Epilayer Grown on Ga2O3 Sacrificial Layer for Chemical Lift-Off Application | Tsai, Tsung-Yen; Horng, Ray-Hua; Wuu, Dong-Sing; Ou, Sin-Liang; Hung, Ming-Tsung; Hsueh, Hsu-Hung | - |
| - | High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target | Shen, Kun-Ching; Wang, Tzu-Yu; Wuu, Dong-Sing; Horng, Ray-Hua | - |
| - | High performance GaN-based flip-chip LEDs with different electrode patterns | Horng, Ray-Hua; Chuang, Shih-Hao; Tien, Ching-Ho; Lin, Sin-Cyuan; Wuu, Dong-Sing | - |
| - | High thermal stability of high indium content InGaN films grown by pulsed laser deposition | Shen, Kun-Ching; Wang, Tzu-Yu; Wuu, Dong-Sing; Horng, Ray-Hua | - |
| - | Hot-wire chemical vapor deposition and characterization of p-type nanocrystalline Si films for thin film photovoltaic applications | Mao, Hsin-Yuan; Lo, Shih-Yung; Wuu, Dong-Sing; Wu, Bing-Rui; Ou, Sin-Liang; Hsieh, Hsin-Yu; Horng, Ray-Hua | - |
| - | Hot-wire chemical vapor deposition and characterization of polycrystalline silicon thin films using a two-step growth method | Mao, Hsin-Yuan; Wuu, Dong-Sing; Wu, Bing-Rui; Lo, Shih-Yung; Horng, Ray-Hua | - |
| - | Improved GaN-on-Si epitaxial quality by incorporating various SixNy interlayer structures | Wang, Tzu-Yu; Ou, Sin-Liang; Horng, Ray-Hua; Wuu, Dong-Sing | - |
| - | Improved Performance of 365-nm LEDs by Inserting an Un-Doped Electron-Blocking Layer | Lin, Wen-Yu; Wang, Tzu-Yu; Ou, Sin-Liang; Liang, Jia-Hao; Wuu, Dong-Sing | - |
| - | Improved Performance of Near-Ultraviolet Light Emitting Diodes on Selectively Etched GaN Templates | Tsai, Tsung-Yen; Wuu, Dong-Sing; Tu, Jen-Hung; Hung, Ming-Tsung; Huang, Shih-Cheng; Huang, Shih-Yung; Horng, Ray-Hua | - |
| - | Improvement in performance of Si-based thin film solar cells with a nanocrystalline SiO2–TiO2 layer | Lin, Yang-Shih; Lien, Shui-Yang; Wuu, Dong-Sing; Huang, Yu-Xuan; Kung, Chung-Yuan | - |
| - | Improvement of thermal management of high-power GaN-based light-emitting diodes | Liou, Bo-Hung; Chen, Chih-Ming; Horng, Ray-Hua; Chiang, Yi-Chen; Wuu, Dong-Sing | - |
| - | Method for forming a light emitting diode | Horng, Ray-Hua; Wuu, Dong-Sing | |
| - | MOCVD Growth of GaN on Sapphire Using a Ga2O3 Interlayer | Tsai, Tsung-Yen; Ou, Sin-Liang; Hung, Ming-Tsung; Wuu, Dong-Sing; Horng, Ray-Hua | - |
| - | Performance of a-SiGe:H Thin-Film Solar Cells on High-Heat Dissipation Flexible Ceramic Printable Circuit Board | Wang, Chao-Chun; Wu, Zong-Syun; Hsu, Chia-Hsun; Lien, Shui-Yang; Wuu, Dong-Sing; Han, Pin | - |
| - | Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates | Horng, Ray-Hua; Wu, Bing-Rui; Tien, Ching-Ho; Ou, Sin-Liang; Yang, Min-Hao; Kuo, Hao-Chung; Wuu, Dong-Sing | - |
