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|標題:||Deposition and characterization of AIN thin films using a dual ion beam sputtering system
|作者:||鄭至軒||關鍵字:||Dual Ion Beam Sputtering;雙離子束濺鍍;AlN;氮化鋁||出版社:||材料工程學研究所||摘要:||
本研究是使用雙離子束濺鍍法(Dual Ion Beam Sputtering，DIBS)在矽基板上沉積氮化鋁(AlN)薄膜。雙離子束濺鍍法是結合Kaufman與End-Hall兩種不同形式離子源的薄膜沉積系統，Kaufman型離子槍主要是用來撞擊靶材，以濺射出鋁原子；而End-Hall型離子槍則是直接以氮離子撞擊基材表面。在本實驗中，我們希望能藉由改變離子束的能量及基板的溫度，以獲得壓電性強的高C軸指向(C-axis orientation)與表面平整性良好的氮化鋁薄膜，作為未來製作表面聲波元件的基礎。
Thin films of aluminum nitride exhibit a number of interesting features such as high thermal conductivity, high electrical resistivity, high surface acoustic wave speed, high hardness, high melting points, wide band gap and chemical inertness. Owing to its excellent features, recently, AlN films have been considered a capable material for a variety of applications in different fields.
In this study, the AlN films were deposited on Si substrate using a dual ion beam sputtering (DIBS) system. The DIBS system used consists of a Kaufman ion gun which bombards the aluminum target, and an End-Hall ion gun which uses a nitrogen ion beam perpendicular to the substrate surface. The Kaufman ion gun and the End-Hall ion gun were separately adjustable. In order to obtain the C-axis oriented and smooth surface of AlN films, the ion beam voltage and substrate temperature were independently controllable.
Finally, the results showed that excellent AlN films which possess the C-axis oriented and uniform concentration were successfully synthesized using the follow parameters: ion beam voltage was maintained at 800V; the ratio of N2/Ar was 3; the working pressure was kept at 6- 6.510-4Torr and the substrate temperature was heated to 4500C.
|Appears in Collections:||材料科學與工程學系|
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